Semiconductors, Transistors, Transistors - IGBTs - Arrays IC(MAX) 10A Pmax 60W

    • Supplier Device Package
    • Input Type
    • IGBT Type
    • Current - Collector Cutoff (Max)
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Series
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List Table
Found: 4
  • HGTP10N50E1
    10A, 500V, N-CHANNEL IGBT
    Harris Corporation
    • Manufacturer: Harris Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220-3
    • Power - Max: 60W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 500V
    • Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A
    • Current - Collector Pulsed (Icm): 17.5 A
    • Gate Charge: 19nC
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  • GT10J312(Q)
    IGBT 600V 10A 60W TO220SM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-220SM
    • Reverse Recovery Time (trr): 200ns
    • Power - Max: 60W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 300V, 10A, 100Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
    • Current - Collector Pulsed (Icm): 20A
    • Td (on/off) @ 25°C: 400ns/400ns
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  • HGTP10N40E1
    10A, 400V, N-CHANNEL IGBT
    Harris Corporation
    • Manufacturer: Harris Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220-3
    • Power - Max: 60W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 400V
    • Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A
    • Current - Collector Pulsed (Icm): 17.5 A
    • Gate Charge: 19nC
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  • HGTP10N40C1
    10A, 400V, N-CHANNEL IGBT
    Harris Corporation
    • Manufacturer: Harris Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220-3
    • Power - Max: 60W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 400V
    • Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A
    • Current - Collector Pulsed (Icm): 17.5 A
    • Gate Charge: 19nC
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