Semiconductors, Transistors, Transistors - IGBTs - Arrays IC(MAX) 117A Pmax 500W

    • Supplier Device Package
    • Input Type
    • IGBT Type
    • Current - Collector Cutoff (Max)
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Series
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List Table
Found: 6
  • APT64GA90B2D30
    IGBT 900V 117A 500W TO-247
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: POWER MOS 8™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3 Variant
    • Power - Max: 500W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 117A
    • Voltage - Collector Emitter Breakdown (Max): 900V
    • Test Condition: 600V, 38A, 4.7Ohm, 15V
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
    • Current - Collector Pulsed (Icm): 193A
    • Switching Energy: 1192µJ (on), 1088µJ (off)
    • Gate Charge: 162nC
    • Td (on/off) @ 25°C: 18ns/131ns
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  • APT64GA90LD30
    IGBT 900V 117A 500W TO-264
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: POWER MOS 8™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: TO-264 [L]
    • Power - Max: 500W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 117A
    • Voltage - Collector Emitter Breakdown (Max): 900V
    • Test Condition: 600V, 38A, 4.7Ohm, 15V
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
    • Current - Collector Pulsed (Icm): 193A
    • Switching Energy: 1192µJ (on), 1088µJ (off)
    • Gate Charge: 162nC
    • Td (on/off) @ 25°C: 18ns/131ns
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  • APT64GA90LD30
    IGBT 900V 117A 500W TO-264
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: POWER MOS 8™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: TO-264 [L]
    • Power - Max: 500W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 117A
    • Voltage - Collector Emitter Breakdown (Max): 900V
    • Test Condition: 600V, 38A, 4.7Ohm, 15V
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
    • Current - Collector Pulsed (Icm): 193A
    • Switching Energy: 1192µJ (on), 1088µJ (off)
    • Gate Charge: 162nC
    • Td (on/off) @ 25°C: 18ns/131ns
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  • APT64GA90B
    IGBT 900V 117A 500W TO247
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247 [B]
    • Power - Max: 500W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 117A
    • Voltage - Collector Emitter Breakdown (Max): 900V
    • Test Condition: 600V, 38A, 4.7Ohm, 15V
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
    • Current - Collector Pulsed (Icm): 193A
    • Switching Energy: 1857µJ (on), 2311µJ (off)
    • Gate Charge: 162nC
    • Td (on/off) @ 25°C: 18ns/131ns
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  • APT64GA90B
    IGBT 900V 117A 500W TO247
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247 [B]
    • Power - Max: 500W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 117A
    • Voltage - Collector Emitter Breakdown (Max): 900V
    • Test Condition: 600V, 38A, 4.7Ohm, 15V
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
    • Current - Collector Pulsed (Icm): 193A
    • Switching Energy: 1857µJ (on), 2311µJ (off)
    • Gate Charge: 162nC
    • Td (on/off) @ 25°C: 18ns/131ns
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  • APT64GA90B2D30
    IGBT 900V 117A 500W TO-247
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: POWER MOS 8™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3 Variant
    • Power - Max: 500W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 117A
    • Voltage - Collector Emitter Breakdown (Max): 900V
    • Test Condition: 600V, 38A, 4.7Ohm, 15V
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
    • Current - Collector Pulsed (Icm): 193A
    • Switching Energy: 1192µJ (on), 1088µJ (off)
    • Gate Charge: 162nC
    • Td (on/off) @ 25°C: 18ns/131ns
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