Semiconductors, Transistors, Transistors - IGBTs - Arrays IC(MAX) 100A Pmax 417W

Found: 4
  • IGBT 50A 600V TO-247
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Reverse Recovery Time (trr): 94ns
    • Power - Max: 417W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 50A, 10Ohm, 15V
    • IGBT Type: Trench
    • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 200A
    • Switching Energy: 1.5mJ (on), 460µJ (off)
    • Gate Charge: 220nC
    • Td (on/off) @ 25°C: 100ns/237ns
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  • IGBT
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Reverse Recovery Time (trr): 94ns
    • Power - Max: 417W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 50A, 10Ohm, 15V
    • IGBT Type: Trench
    • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 200A
    • Switching Energy: 1.5mJ (on), 460µJ (off)
    • Gate Charge: 220nC
    • Td (on/off) @ 25°C: 100ns/237ns
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  • IGBT 600V 50A TO247
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Reverse Recovery Time (trr): 94ns
    • Power - Max: 417W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 50A, 10Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 200A
    • Switching Energy: 1.5mJ (on), 460µJ (off)
    • Gate Charge: 220nC
    • Td (on/off) @ 25°C: 100ns/237ns
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  • IGBT TRENCH/FS 650V 100A TO247-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Reverse Recovery Time (trr): 94ns
    • Power - Max: 417W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 50A, 10Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 200A
    • Switching Energy: 1.5mJ (on), 460µJ (off)
    • Gate Charge: 220nC
    • Td (on/off) @ 25°C: 100ns/237ns
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