Semiconductors, Transistors, Transistors - IGBTs - Arrays IC(MAX) 110A Pmax 416W

Found: 15
  • IGBT MODULE 600V 110A 416W SP1
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • Configuration: Half Bridge
    • Power - Max: 416W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
    • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
    • NTC Thermistor: Yes
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  • IGBT MODULE 600V 110A 416W SP4
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP4
    • Supplier Device Package: SP4
    • Configuration: Full Bridge Inverter
    • Power - Max: 416W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
    • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
    • NTC Thermistor: Yes
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  • IGBT MODULE 600V 110A 416W SP4
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP4
    • Supplier Device Package: SP4
    • Configuration: Half Bridge
    • Power - Max: 416W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
    • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
    • NTC Thermistor: Yes
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  • IGBT MODULE 600V 110A 416W SP3
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • Configuration: Asymmetrical Bridge
    • Power - Max: 416W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
    • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
    • NTC Thermistor: Yes
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  • IGBT MODULE 600V 110A 416W SP1
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • Configuration: Single
    • Power - Max: 416W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
    • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
    • NTC Thermistor: Yes
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  • IGBT MODULE 600V 110A 416W SP1
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • Configuration: Single
    • Power - Max: 416W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
    • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
    • NTC Thermistor: Yes
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  • IGBT MODULE 600V 110A 416W SP1
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • Configuration: Half Bridge
    • Power - Max: 416W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
    • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
    • NTC Thermistor: Yes
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  • IGBT MODULE 600V 110A 416W SP4
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP4
    • Supplier Device Package: SP4
    • Configuration: Asymmetrical Bridge
    • Power - Max: 416W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
    • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
    • NTC Thermistor: Yes
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  • IGBT MODULE 600V 110A 416W SP4
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Package / Case: SP4
    • Supplier Device Package: SP4
    • Configuration: Dual, Common Source
    • Power - Max: 416W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
    • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
    • NTC Thermistor: Yes
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  • IGBT MODULE 600V 110A 416W SP6P
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Package / Case: SP6
    • Supplier Device Package: SP6-P
    • Configuration: Three Phase
    • Power - Max: 416W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
    • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
    • NTC Thermistor: No
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  • IGBT MODULE 600V 110A 416W SP4
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP4
    • Supplier Device Package: SP4
    • Configuration: Single
    • Power - Max: 416W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
    • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
    • NTC Thermistor: Yes
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  • IGBT MODULE 600V 110A 416W SP1
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • Configuration: Single
    • Power - Max: 416W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
    • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
    • NTC Thermistor: Yes
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  • IGBT MODULE 600V 110A 416W SP4
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP4
    • Supplier Device Package: SP4
    • Configuration: Half Bridge
    • Power - Max: 416W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
    • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
    • NTC Thermistor: Yes
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  • IGBT MODULE 600V 110A 416W SP4
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP4
    • Supplier Device Package: SP4
    • Configuration: Single
    • Power - Max: 416W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
    • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
    • NTC Thermistor: Yes
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  • IGBT MODULE 600V 110A 416W SP6P
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6-P
    • Configuration: Triple, Dual - Common Source
    • Power - Max: 416W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
    • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
    • NTC Thermistor: No
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