Semiconductors, Transistors, Transistors - IGBTs - Arrays IC(MAX) 120A Pmax 378W

Found: 3
  • IGBT FIELD STOP 600V 120A TO247
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Power - Max: 378W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 60A, 5Ohm, 15V
    • IGBT Type: Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
    • Current - Collector Pulsed (Icm): 180A
    • Switching Energy: 1.79mJ (on), 670µJ (off)
    • Gate Charge: 198nC
    • Td (on/off) @ 25°C: 22ns/134ns
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  • IGBT FIELD STOP 600V 120A TO247
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Reverse Recovery Time (trr): 47ns
    • Power - Max: 378W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 60A, 5Ohm, 15V
    • IGBT Type: Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
    • Current - Collector Pulsed (Icm): 180A
    • Switching Energy: 1.79mJ (on), 670µJ (off)
    • Gate Charge: 198nC
    • Td (on/off) @ 25°C: 22ns/134ns
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  • IGBT FIELD STOP 600V 120A TO247
    onsemi
    • Manufacturer: onsemi
    • Series: Automotive, AEC-Q101
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Reverse Recovery Time (trr): 55ns
    • Power - Max: 378W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 60A, 5Ohm, 15V
    • IGBT Type: Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
    • Current - Collector Pulsed (Icm): 180A
    • Switching Energy: 1.97mJ (on), 570µJ (off)
    • Gate Charge: 188nC
    • Td (on/off) @ 25°C: 26ns/134ns
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