Semiconductors, Transistors, Transistors - IGBTs - Arrays IC(MAX) 100A Pmax 375W

Found: 6
  • IGBT TRENCH 1200V 100A TO247-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: TrenchStop™
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PG-TO247-3-1
    • Power - Max: 375W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 600V, 60A, 10Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
    • Current - Collector Pulsed (Icm): 150A
    • Switching Energy: 9.5mJ
    • Gate Charge: 280nC
    • Td (on/off) @ 25°C: 50ns/480ns
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  • IGBT TRENCH 650V 100A TO247A
    Renesas Electronics America Inc
    • Manufacturer: Renesas Electronics America Inc
    • Mounting Type: Through Hole
    • Operating Temperature: 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247A
    • Reverse Recovery Time (trr): 80ns
    • Power - Max: 375W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 50A, 10Ohm, 15V
    • IGBT Type: Trench
    • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A
    • Switching Energy: 1mJ (on), 1.5mJ (off)
    • Gate Charge: 175nC
    • Td (on/off) @ 25°C: 20ns/165ns
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  • IGBT 650V 50A TO-247
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Series: Alpha IGBT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247
    • Reverse Recovery Time (trr): 261ns
    • Power - Max: 375W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 50A, 6Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 150A
    • Switching Energy: 1.92mJ (on), 850µJ (off)
    • Gate Charge: 76nC
    • Td (on/off) @ 25°C: 37ns/141ns
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  • IGBT TRENCH 650V 100A TO247A
    Renesas Electronics America
    • Manufacturer: Renesas Electronics America
    • Mounting Type: Through Hole
    • Operating Temperature: 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247A
    • Reverse Recovery Time (trr): 80ns
    • Power - Max: 375W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 50A, 10Ohm, 15V
    • IGBT Type: Trench
    • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A
    • Switching Energy: 1mJ (on), 1.5mJ (off)
    • Gate Charge: 175nC
    • Td (on/off) @ 25°C: 20ns/165ns
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  • IGBT MOD 1200V 100A 375W
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: EasyPACK™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C
    • Package / Case: Module
    • Supplier Device Package: Module
    • Configuration: Three Phase Inverter
    • Power - Max: 375W
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 1mA
    • Input: Standard
    • Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A
    • Input Capacitance (Cies) @ Vce: 6.15nF @ 25V
    • NTC Thermistor: Yes
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  • IGBT 600V-X TO247 TUBE 0.45K
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247
    • Reverse Recovery Time (trr): 80ns
    • Power - Max: 375W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 50A, 7.9Ohm, 15V
    • IGBT Type: Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 200A
    • Switching Energy: 770µJ (on), 550µJ (off)
    • Gate Charge: 287nC
    • Td (on/off) @ 25°C: 58ns/328ns
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