Semiconductors, Transistors, Transistors - IGBTs - Arrays IC(MAX) 107A Pmax 366W

    • Supplier Device Package
    • Input Type
    • IGBT Type
    • Current - Collector Cutoff (Max)
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Series
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List Table
Found: 5
  • APT50GN60BG
    IGBT 600V 107A 366W TO247
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247 [B]
    • Power - Max: 366W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 107A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 50A, 4.3Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 150A
    • Switching Energy: 1185µJ (on), 1565µJ (off)
    • Gate Charge: 325nC
    • Td (on/off) @ 25°C: 20ns/230ns
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  • APT50GN60BDQ2G
    IGBT 600V 107A 366W TO247
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247 [B]
    • Power - Max: 366W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 107A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 50A, 4.3Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 150A
    • Switching Energy: 1185µJ (on), 1565µJ (off)
    • Gate Charge: 325nC
    • Td (on/off) @ 25°C: 20ns/230ns
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  • APT50GN60BG
    IGBT 600V 107A 366W TO247
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247 [B]
    • Power - Max: 366W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 107A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 50A, 4.3Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 150A
    • Switching Energy: 1185µJ (on), 1565µJ (off)
    • Gate Charge: 325nC
    • Td (on/off) @ 25°C: 20ns/230ns
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  • APT50GN60BDQ2G
    IGBT 600V 107A 366W TO247
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247 [B]
    • Power - Max: 366W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 107A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 50A, 4.3Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 150A
    • Switching Energy: 1185µJ (on), 1565µJ (off)
    • Gate Charge: 325nC
    • Td (on/off) @ 25°C: 20ns/230ns
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  • APT50GN60BDQ3G
    IGBT FIELDSTOP COMBI 600V 50A TO
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Reverse Recovery Time (trr): 35ns
    • Power - Max: 366W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 107A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 50A, 4.3Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 150A
    • Switching Energy: 1.185mJ (on), 1.565mJ (off)
    • Gate Charge: 325nC
    • Td (on/off) @ 25°C: 20ns/230ns
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