Semiconductors, Transistors, Transistors - IGBTs - Arrays IC(MAX) 120A Pmax 360W

Found: 3
  • IGBT 600V 120A 360W PLUS264
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFAST™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: PLUS264™
    • Reverse Recovery Time (trr): 50ns
    • Power - Max: 360W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 480V, 75A, 5Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
    • Current - Collector Pulsed (Icm): 300A
    • Switching Energy: 3.3mJ (off)
    • Gate Charge: 248nC
    • Td (on/off) @ 25°C: 62ns/220ns
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  • IGBT 650V 120A 360W TO247
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Power - Max: 360W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 60A, 10Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
    • Current - Collector Pulsed (Icm): 240A
    • Switching Energy: 750µJ (on), 1.05mJ (off)
    • Gate Charge: 217nC
    • Td (on/off) @ 25°C: 65ns/180ns
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  • IGBT 650V 120A 360W TO247
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Reverse Recovery Time (trr): 62ns
    • Power - Max: 360W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 60A, 10Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
    • Current - Collector Pulsed (Icm): 240A
    • Switching Energy: 1.5mJ (on), 1.1mJ (off)
    • Gate Charge: 206nC
    • Td (on/off) @ 25°C: 67ns/165ns
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