Semiconductors, Transistors, Transistors - IGBTs - Arrays IC(MAX) 110A Pmax 357W

    • Supplier Device Package
    • Input Type
    • IGBT Type
    • Current - Collector Cutoff (Max)
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Series
  • 10
  • 15
  • 50
  • 100
List Table
Found: 17
  • APTGT75DH120T3G
    IGBT MODULE 1200V 110A 357W SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • Configuration: Asymmetrical Bridge
    • Power - Max: 357W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
    • NTC Thermistor: Yes
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • APTGT75A120D1G
    IGBT MODULE 1200V 110A 357W D1
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Package / Case: D1
    • Supplier Device Package: D1
    • Configuration: Half Bridge
    • Power - Max: 357W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 4mA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 5.345 nF @ 25 V
    • NTC Thermistor: No
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • APTGT75H120TG
    IGBT MODULE 1200V 110A 357W SP4
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP4
    • Supplier Device Package: SP4
    • Configuration: Full Bridge Inverter
    • Power - Max: 357W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
    • NTC Thermistor: Yes
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • APTGT75A120T1G
    IGBT MODULE 1200V 110A 357W SP1
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • Configuration: Half Bridge
    • Power - Max: 357W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
    • NTC Thermistor: Yes
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • APTGT75SK120TG
    IGBT MODULE 1200V 110A 357W SP4
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP4
    • Supplier Device Package: SP4
    • Configuration: Single
    • Power - Max: 357W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
    • NTC Thermistor: Yes
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • APTGT75DH120T3G
    IGBT MODULE 1200V 110A 357W SP3
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • Configuration: Asymmetrical Bridge
    • Power - Max: 357W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
    • NTC Thermistor: Yes
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • APTGT75H120TG
    IGBT MODULE 1200V 110A 357W SP4
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP4
    • Supplier Device Package: SP4
    • Configuration: Full Bridge Inverter
    • Power - Max: 357W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
    • NTC Thermistor: Yes
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • APTGT75DA120D1G
    IGBT MODULE 1200V 110A 357W D1
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: D1
    • Supplier Device Package: D1
    • Configuration: Single
    • Power - Max: 357W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 4mA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 5.345 nF @ 25 V
    • NTC Thermistor: No
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • APTGT75DA120TG
    IGBT MODULE 1200V 110A 357W SP4
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP4
    • Supplier Device Package: SP4
    • Configuration: Single
    • Power - Max: 357W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
    • NTC Thermistor: Yes
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • APTGT75A1202G
    IGBT MODULE 1200V 110A 357W SP2
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP2
    • Supplier Device Package: SP2
    • Configuration: Half Bridge
    • Power - Max: 357W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 50µA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
    • NTC Thermistor: No
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • APTGT75A120T1G
    IGBT MODULE 1200V 110A 357W SP1
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • Configuration: Half Bridge
    • Power - Max: 357W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
    • NTC Thermistor: Yes
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • APTGT75SK120T1G
    IGBT MODULE 1200V 110A 357W SP1
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • Configuration: Single
    • Power - Max: 357W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
    • NTC Thermistor: Yes
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • APTGT75DA120TG
    IGBT MODULE 1200V 110A 357W SP4
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP4
    • Supplier Device Package: SP4
    • Configuration: Single
    • Power - Max: 357W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
    • NTC Thermistor: Yes
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • APTGT75DA120T1G
    IGBT MODULE 1200V 110A 357W SP1
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • Configuration: Single
    • Power - Max: 357W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
    • NTC Thermistor: Yes
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • APTGT75DH120TG
    IGBT MODULE 1200V 110A 357W SP4
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP4
    • Supplier Device Package: SP4
    • Configuration: Asymmetrical Bridge
    • Power - Max: 357W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
    • NTC Thermistor: Yes
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • 10
  • 15
  • 50
  • 100