Semiconductors, Transistors, Transistors - IGBTs - Arrays IC(MAX) 100A Pmax 319W
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- Supplier Device Package
- Input Type
- IGBT Type
- Current - Collector Cutoff (Max)
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Test Condition
- Current - Collector Pulsed (Icm)
- Reverse Recovery Time (trr)
- NTC Thermistor
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Series
-
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
- Reverse Recovery Time (trr): 34.6ns
- Power - Max: 319W
- Input Type: Standard
- Current - Collector (Ic) (Max): 100A
- Voltage - Collector Emitter Breakdown (Max): 650V
- Test Condition: 400V, 50A, 6Ohm, 15V
- IGBT Type: Trench Field Stop
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Current - Collector Pulsed (Icm): 150A
- Switching Energy: 1.28mJ (on), 384µJ (off)
- Gate Charge: 87nC
- Td (on/off) @ 25°C: 22.4ns/73.6ns
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