Semiconductors, Transistors, Transistors - IGBTs - Arrays IC(MAX) 120A Pmax 306W

    • Supplier Device Package
    • Input Type
    • IGBT Type
    • Current - Collector Cutoff (Max)
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Series
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List Table
Found: 3
  • FGA6065ADF
    INSULATED GATE BIPOLAR TRANSISTO
    Fairchild Semiconductor
    • Manufacturer: Fairchild Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-3P-3, SC-65-3
    • Supplier Device Package: TO-3PN
    • Reverse Recovery Time (trr): 110ns
    • Power - Max: 306W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 60A, 6Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
    • Current - Collector Pulsed (Icm): 180A
    • Switching Energy: 2.46mJ (on), 520µJ (off)
    • Gate Charge: 84nC
    • Td (on/off) @ 25°C: 25.6ns/71ns
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  • FGA6560WDF
    IGBT TRENCH/FS 650V 120A TO3PN
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-3P-3, SC-65-3
    • Supplier Device Package: TO-3PN
    • Reverse Recovery Time (trr): 110ns
    • Power - Max: 306W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 60A, 6Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
    • Current - Collector Pulsed (Icm): 180A
    • Switching Energy: 2.46mJ (on), 520µJ (off)
    • Gate Charge: 84nC
    • Td (on/off) @ 25°C: 25.6ns/71ns
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  • FGA6065ADF
    IGBT TRENCH/FS 650V 120A TO3PN
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-3P-3, SC-65-3
    • Supplier Device Package: TO-3PN
    • Reverse Recovery Time (trr): 110ns
    • Power - Max: 306W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 60A, 6Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
    • Current - Collector Pulsed (Icm): 180A
    • Switching Energy: 2.46mJ (on), 520µJ (off)
    • Gate Charge: 84nC
    • Td (on/off) @ 25°C: 25.6ns/71ns
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    • Offers in stock:
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