- Power - Max
- Current - Collector (Ic) (Max)
- Voltage - Collector Emitter Breakdown (Max)
-
- Supplier Device Package
- Input Type
- IGBT Type
- Current - Collector Cutoff (Max)
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Test Condition
- Current - Collector Pulsed (Icm)
- Reverse Recovery Time (trr)
- NTC Thermistor
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Series
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- Manufacturer: IXYS
- Series: GenX3™, XPT™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PLUS247™-3
- Power - Max: 1150W
- Input Type: Standard
- Current - Collector (Ic) (Max): 225A
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Test Condition: 600V, 100A, 1Ohm, 15V
- IGBT Type: PT
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
- Current - Collector Pulsed (Icm): 530A
- Switching Energy: 7.7mJ (on), 7.1mJ (off)
- Gate Charge: 250nC
- Td (on/off) @ 25°C: 30ns/153ns
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- Manufacturer: Infineon Technologies
- Series: EconoDUAL™ 3
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C
- Package / Case: Module
- Supplier Device Package: Module
- Configuration: 2 Independent
- Power - Max: 1150W
- Current - Collector (Ic) (Max): 450A
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector Cutoff (Max): 1mA
- Input: Standard
- IGBT Type: Trench Field Stop
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
- Input Capacitance (Cies) @ Vce: 26nF @ 25V
- NTC Thermistor: Yes
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- Manufacturer: Microsemi Corporation
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: SP6
- Supplier Device Package: SP6
- Configuration: Half Bridge
- Power - Max: 1150W
- Current - Collector (Ic) (Max): 430A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector Cutoff (Max): 350µA
- Input: Standard
- IGBT Type: Trench Field Stop
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 300A
- Input Capacitance (Cies) @ Vce: 24nF @ 25V
- NTC Thermistor: No
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- Manufacturer: Powerex Inc.
- Series: IGBTMOD™
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: Module
- Supplier Device Package: Module
- Configuration: Half Bridge
- Power - Max: 1150W
- Current - Collector (Ic) (Max): 150A
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector Cutoff (Max): 1mA
- Input: Standard
- Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 150A
- Input Capacitance (Cies) @ Vce: 15nF @ 10V
- NTC Thermistor: Yes
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- Manufacturer: Microsemi Corporation
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: SP6
- Supplier Device Package: SP6
- Configuration: Full Bridge Inverter
- Power - Max: 1150W
- Current - Collector (Ic) (Max): 430A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector Cutoff (Max): 350µA
- Input: Standard
- IGBT Type: Trench Field Stop
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 300A
- Input Capacitance (Cies) @ Vce: 24nF @ 25V
- NTC Thermistor: No
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- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: SP6
- Supplier Device Package: SP6
- Configuration: Dual, Common Source
- Power - Max: 1150W
- Current - Collector (Ic) (Max): 430A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector Cutoff (Max): 350µA
- Input: Standard
- IGBT Type: Trench Field Stop
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 300A
- Input Capacitance (Cies) @ Vce: 24nF @ 25V
- NTC Thermistor: No
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- Manufacturer: IXYS
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268HV (IXYT)
- Reverse Recovery Time (trr): 40ns
- Power - Max: 1150W
- Input Type: Standard
- Current - Collector (Ic) (Max): 300A
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Test Condition: 600V, 60A, 5Ohm, 15V
- IGBT Type: PT
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A
- Current - Collector Pulsed (Icm): 520 A
- Switching Energy: 4.9mJ (on), 8.3mJ (off)
- Gate Charge: 200nC
- Td (on/off) @ 25°C: 40ns/400ns
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- Manufacturer: Microsemi Corporation
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: SP6
- Supplier Device Package: SP6
- Configuration: Single
- Power - Max: 1150W
- Current - Collector (Ic) (Max): 430A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector Cutoff (Max): 350µA
- Input: Standard
- IGBT Type: Trench Field Stop
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 300A
- Input Capacitance (Cies) @ Vce: 24nF @ 25V
- NTC Thermistor: No
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- Manufacturer: Microsemi Corporation
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: SP6
- Supplier Device Package: SP6
- Configuration: Asymmetrical Bridge
- Power - Max: 1150W
- Current - Collector (Ic) (Max): 430A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector Cutoff (Max): 350µA
- Input: Standard
- IGBT Type: Trench Field Stop
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 300A
- Input Capacitance (Cies) @ Vce: 24nF @ 25V
- NTC Thermistor: No
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- Manufacturer: Infineon Technologies
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-274AA
- Supplier Device Package: SUPER-247™ (TO-274AA)
- Power - Max: 1150W
- Input Type: Standard
- Current - Collector (Ic) (Max): 220A
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Test Condition: 600V, 75A, 4.7Ohm, 15V
- IGBT Type: Trench
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
- Current - Collector Pulsed (Icm): 225A
- Switching Energy: 7.7mJ (on), 4.6mJ (off)
- Gate Charge: 360nC
- Td (on/off) @ 25°C: 63ns/267ns
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- Manufacturer: IXYS
- Series: XPT™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXTH)
- Reverse Recovery Time (trr): 60ns
- Power - Max: 1150W
- Input Type: Standard
- Current - Collector (Ic) (Max): 240A
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Test Condition: 600V, 50A, 5Ohm, 15V
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
- Current - Collector Pulsed (Icm): 420A
- Switching Energy: 4.3mJ (on), 2mJ (off)
- Gate Charge: 192nC
- Td (on/off) @ 25°C: 35ns/280ns
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- Manufacturer: IXYS
- Series: XPT™, GenX4™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
- Reverse Recovery Time (trr): 66ns
- Power - Max: 1150W
- Input Type: Standard
- Current - Collector (Ic) (Max): 240A
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Test Condition: 600V, 50A, 3Ohm, 15V
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
- Current - Collector Pulsed (Icm): 440A
- Switching Energy: 4.5mJ (on), 2.7mJ (off)
- Gate Charge: 157nC
- Td (on/off) @ 25°C: 22ns/182ns
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- Manufacturer: Infineon Technologies
- Series: EconoPACK™+
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 125°C
- Package / Case: Module
- Supplier Device Package: Module
- Configuration: Full Bridge
- Power - Max: 1150W
- Current - Collector (Ic) (Max): 325A
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector Cutoff (Max): 5mA
- Input: Standard
- IGBT Type: Trench Field Stop
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
- Input Capacitance (Cies) @ Vce: 16nF @ 25V
- NTC Thermistor: Yes
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- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C
- Package / Case: Module
- Supplier Device Package: Module
- Configuration: Three Phase Inverter
- Power - Max: 1150W
- Current - Collector (Ic) (Max): 460A
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector Cutoff (Max): 20µA
- Input: Standard
- IGBT Type: Trench Field Stop
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
- Input Capacitance (Cies) @ Vce: 18.5nF @ 25V
- NTC Thermistor: Yes
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- Manufacturer: IXYS
- Series: GenX3™, XPT™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264 (IXYK)
- Power - Max: 1150W
- Input Type: Standard
- Current - Collector (Ic) (Max): 188A
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Test Condition: 600V, 100A, 1Ohm, 15V
- Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
- Current - Collector Pulsed (Icm): 490A
- Switching Energy: 6.5mJ (on), 2.9mJ (off)
- Gate Charge: 270nC
- Td (on/off) @ 25°C: 32ns/123ns
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- Offers in stock:
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- 15
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- 100