Semiconductors, Transistors, Transistors - IGBTs - Arrays Pmax 111W

Found: 5
  • LOW VCE(SAT) TYPE, 600V 30A, TO-
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247G
    • Power - Max: 111W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 48A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 30A, 10Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
    • Current - Collector Pulsed (Icm): 120A
    • Switching Energy: 770µJ (on), 1.11mJ (off)
    • Gate Charge: 68nC
    • Td (on/off) @ 25°C: 44ns/186ns
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  • IGBT TRENCH/FS 600V 34A TO247-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: TrenchStop™
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PG-TO247-3-AI
    • Reverse Recovery Time (trr): 72ns
    • Power - Max: 111W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 34A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 30A, 10Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
    • Current - Collector Pulsed (Icm): 90A
    • Switching Energy: 870µJ (on), 360µJ (off)
    • Gate Charge: 107nC
    • Td (on/off) @ 25°C: 18ns/144ns
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  • IGBT
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247N
    • Reverse Recovery Time (trr): 58ns
    • Power - Max: 111W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 48A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 30A, 10Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
    • Current - Collector Pulsed (Icm): 120A
    • Switching Energy: 770µJ (on), 1.11mJ (off)
    • Gate Charge: 68nC
    • Td (on/off) @ 25°C: 44ns/186ns
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  • IGBT
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247N
    • Power - Max: 111W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 48A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 30A, 10Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
    • Current - Collector Pulsed (Icm): 120A
    • Switching Energy: 770µJ (on), 1.11mJ (off)
    • Gate Charge: 68nC
    • Td (on/off) @ 25°C: 44ns/186ns
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  • LOW VCE(SAT) TYPE, 600V 30A, FRD
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247G
    • Reverse Recovery Time (trr): 58ns
    • Power - Max: 111W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 48A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 30A, 10Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
    • Current - Collector Pulsed (Icm): 120A
    • Switching Energy: 770µJ (on), 1.11mJ (off)
    • Gate Charge: 68nC
    • Td (on/off) @ 25°C: 44ns/186ns
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