Semiconductors, Transistors, Transistors - IGBTs - Arrays Pmax 11000W

    • Supplier Device Package
    • Input Type
    • IGBT Type
    • Current - Collector Cutoff (Max)
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Series
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List Table
Found: 2
  • FZ1800R12HE4B9HOSA2
    IGBT MODULE 1200V 2735A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: IHM-B
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C
    • Package / Case: Module
    • Supplier Device Package: Module
    • Configuration: Single Switch
    • Power - Max: 11000W
    • Current - Collector (Ic) (Max): 2735A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 5mA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 1800A
    • Input Capacitance (Cies) @ Vce: 110nF @ 25V
    • NTC Thermistor: No
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  • FZ1800R16KF4NOSA1
    FZ1800R16 - IGBT MODULE
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: Module
    • Configuration: 3 Independent
    • Power - Max: 11000W
    • Current - Collector (Ic) (Max): 1800A
    • Voltage - Collector Emitter Breakdown (Max): 1600V
    • Current - Collector Cutoff (Max): 12mA
    • Input: Standard
    • NTC Thermistor: No
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