• Power - Max
  • Current - Collector (Ic) (Max)
  • Voltage - Collector Emitter Breakdown (Max)
    • Supplier Device Package
    • Input Type
    • IGBT Type
    • Current - Collector Cutoff (Max)
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Series
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List Table
Found: 26
  • HGT1S12N60C3D
    24A, 600V, N-CHANNEL IGBT
    Harris Corporation
    • Manufacturer: Harris Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
    • Supplier Device Package: I2PAK (TO-262)
    • Reverse Recovery Time (trr): 40ns
    • Power - Max: 104W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 24A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
    • Current - Collector Pulsed (Icm): 96A
    • Gate Charge: 62nC
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  • HGT1S12N60B3DS
    27A, 600V, UFS N-CHANNEL IGBT W/
    Harris Corporation
    • Manufacturer: Harris Corporation
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263AB
    • Power - Max: 104W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 27A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 480V, 12A, 25Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
    • Current - Collector Pulsed (Icm): 110A
    • Switching Energy: 304µJ (on), 250µJ (off)
    • Gate Charge: 78nC
    • Td (on/off) @ 25°C: 26ns/150ns
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  • HGTG12N60C3D
    UFS SERIES N-CH IGBT
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Reverse Recovery Time (trr): 42ns
    • Power - Max: 104W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 24A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
    • Current - Collector Pulsed (Icm): 96A
    • Switching Energy: 380µJ (on), 900µJ (off)
    • Gate Charge: 48nC
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  • HGT1S2N120CN
    IGBT 1200V 13A 104W I2PAK
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
    • Supplier Device Package: TO-262
    • Power - Max: 104W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 13A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 960V, 2.6A, 51Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A
    • Current - Collector Pulsed (Icm): 20A
    • Switching Energy: 96µJ (on), 355µJ (off)
    • Gate Charge: 30nC
    • Td (on/off) @ 25°C: 25ns/205ns
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  • HGT1S12N60B3
    27A, 600V, N-CHANNEL IGBT
    Harris Corporation
    • Manufacturer: Harris Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
    • Supplier Device Package: I2PAK (TO-262)
    • Power - Max: 104W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 27A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 480V, 12A, 25Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
    • Current - Collector Pulsed (Icm): 110A
    • Switching Energy: 304µJ (on), 250µJ (off)
    • Gate Charge: 68nC
    • Td (on/off) @ 25°C: 26ns/150ns
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  • HGT1S2N120CN
    N-CHANNEL IGBT
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
    • Supplier Device Package: TO-262
    • Power - Max: 104W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 13A
    • Voltage - Collector Emitter Breakdown (Max): 1.2V
    • Test Condition: 960V, 2.6A, 51Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A
    • Current - Collector Pulsed (Icm): 20A
    • Switching Energy: 96µJ (on), 355µJ (off)
    • Gate Charge: 30nC
    • Td (on/off) @ 25°C: 25ns/205ns
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  • HGT1S12N60C3
    27A, 600V, UFS N-CHANNEL IGBT
    Harris Corporation
    • Manufacturer: Harris Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
    • Supplier Device Package: I2PAK (TO-262)
    • Power - Max: 104W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 24A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 12A
    • Current - Collector Pulsed (Icm): 96A
    • Gate Charge: 62nC
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  • HGTP12N60C3D
    IGBT 600V 24A TO220-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220-3
    • Reverse Recovery Time (trr): 40ns
    • Power - Max: 104W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 24A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
    • Current - Collector Pulsed (Icm): 96A
    • Switching Energy: 380µJ (on), 900µJ (off)
    • Gate Charge: 48nC
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  • HGT1S12N60C3DS
    IGBT, 24A, 600V, N-CHANNEL
    Fairchild Semiconductor
    • Manufacturer: Fairchild Semiconductor
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263AB
    • Reverse Recovery Time (trr): 32ns
    • Power - Max: 104W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 24A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
    • Current - Collector Pulsed (Icm): 96A
    • Gate Charge: 71nC
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  • FMM6G30US60
    INSULATED GATE BIPOLAR TRANSISTO
    Fairchild Semiconductor
    • Manufacturer: Fairchild Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Module
    • Configuration: Three Phase Inverter with Brake
    • Power - Max: 104W
    • Current - Collector (Ic) (Max): 30A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Three Phase Bridge Rectifier
    • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
    • Input Capacitance (Cies) @ Vce: 2.1nF @ 30V
    • NTC Thermistor: Yes
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  • HGTG12N60B3
    IGBT 600V 27A 104W TO247
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Power - Max: 104W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 27A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 480V, 12A, 25Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
    • Current - Collector Pulsed (Icm): 110A
    • Switching Energy: 150µJ (on), 250µJ (off)
    • Gate Charge: 51nC
    • Td (on/off) @ 25°C: 26ns/150ns
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