Semiconductors, Transistors, Transistors - IGBTs - Arrays Pmax 1.05W

    • Supplier Device Package
    • Input Type
    • IGBT Type
    • Current - Collector Cutoff (Max)
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Series
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List Table
Found: 1
  • FF200R12MT4BOMA1
    IGBT MODULE
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C
    • Package / Case: Module
    • Supplier Device Package: Module
    • Configuration: 2 Independent
    • Power - Max: 1.05W
    • Voltage - Collector Emitter Breakdown (Max): 1.2V
    • Current - Collector Cutoff (Max): 1mA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
    • Input Capacitance (Cies) @ Vce: 14nF @ 25V
    • NTC Thermistor: Yes
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