Semiconductors, Transistors, Transistors - IGBTs - Arrays IC(MAX) 117A

    • Supplier Device Package
    • Input Type
    • IGBT Type
    • Current - Collector Cutoff (Max)
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Series
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List Table
Found: 11
  • APT50GR120L
    IGBT 1200V 117A 694W TO264
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: TO-264
    • Power - Max: 694W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 117A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 600V, 50A, 4.3Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 200A
    • Switching Energy: 2.14mJ (on), 1.48mJ (off)
    • Gate Charge: 445nC
    • Td (on/off) @ 25°C: 28ns/237ns
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  • APT64GA90B2D30
    IGBT 900V 117A 500W TO-247
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: POWER MOS 8™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3 Variant
    • Power - Max: 500W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 117A
    • Voltage - Collector Emitter Breakdown (Max): 900V
    • Test Condition: 600V, 38A, 4.7Ohm, 15V
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
    • Current - Collector Pulsed (Icm): 193A
    • Switching Energy: 1192µJ (on), 1088µJ (off)
    • Gate Charge: 162nC
    • Td (on/off) @ 25°C: 18ns/131ns
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  • APT50GR120B2
    IGBT 1200V 117A 694W TO247
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247
    • Power - Max: 694W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 117A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 600V, 50A, 4.3Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 200A
    • Switching Energy: 2.14mJ (on), 1.48mJ (off)
    • Gate Charge: 445nC
    • Td (on/off) @ 25°C: 28ns/237ns
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  • F3L100R07W2E3B11BOMA1
    IGBT MOD 650V 117A 300W
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C
    • Package / Case: Module
    • Supplier Device Package: Module
    • Configuration: Three Phase Inverter
    • Power - Max: 300W
    • Current - Collector (Ic) (Max): 117A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Current - Collector Cutoff (Max): 1mA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
    • Input Capacitance (Cies) @ Vce: 6.2nF @ 25V
    • NTC Thermistor: Yes
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  • APT64GA90LD30
    IGBT 900V 117A 500W TO-264
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: POWER MOS 8™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: TO-264 [L]
    • Power - Max: 500W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 117A
    • Voltage - Collector Emitter Breakdown (Max): 900V
    • Test Condition: 600V, 38A, 4.7Ohm, 15V
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
    • Current - Collector Pulsed (Icm): 193A
    • Switching Energy: 1192µJ (on), 1088µJ (off)
    • Gate Charge: 162nC
    • Td (on/off) @ 25°C: 18ns/131ns
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  • APT64GA90LD30
    IGBT 900V 117A 500W TO-264
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: POWER MOS 8™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: TO-264 [L]
    • Power - Max: 500W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 117A
    • Voltage - Collector Emitter Breakdown (Max): 900V
    • Test Condition: 600V, 38A, 4.7Ohm, 15V
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
    • Current - Collector Pulsed (Icm): 193A
    • Switching Energy: 1192µJ (on), 1088µJ (off)
    • Gate Charge: 162nC
    • Td (on/off) @ 25°C: 18ns/131ns
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  • APT50GR120B2
    IGBT 1200V 117A 694W TO247
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247
    • Power - Max: 694W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 117A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 600V, 50A, 4.3Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 200A
    • Switching Energy: 2.14mJ (on), 1.48mJ (off)
    • Gate Charge: 445nC
    • Td (on/off) @ 25°C: 28ns/237ns
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  • APT64GA90B
    IGBT 900V 117A 500W TO247
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247 [B]
    • Power - Max: 500W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 117A
    • Voltage - Collector Emitter Breakdown (Max): 900V
    • Test Condition: 600V, 38A, 4.7Ohm, 15V
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
    • Current - Collector Pulsed (Icm): 193A
    • Switching Energy: 1857µJ (on), 2311µJ (off)
    • Gate Charge: 162nC
    • Td (on/off) @ 25°C: 18ns/131ns
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  • APT64GA90B
    IGBT 900V 117A 500W TO247
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247 [B]
    • Power - Max: 500W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 117A
    • Voltage - Collector Emitter Breakdown (Max): 900V
    • Test Condition: 600V, 38A, 4.7Ohm, 15V
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
    • Current - Collector Pulsed (Icm): 193A
    • Switching Energy: 1857µJ (on), 2311µJ (off)
    • Gate Charge: 162nC
    • Td (on/off) @ 25°C: 18ns/131ns
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  • APT50GR120L
    IGBT 1200V 117A 694W TO264
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: TO-264
    • Power - Max: 694W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 117A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 600V, 50A, 4.3Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 200A
    • Switching Energy: 2.14mJ (on), 1.48mJ (off)
    • Gate Charge: 445nC
    • Td (on/off) @ 25°C: 28ns/237ns
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  • APT64GA90B2D30
    IGBT 900V 117A 500W TO-247
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: POWER MOS 8™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3 Variant
    • Power - Max: 500W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 117A
    • Voltage - Collector Emitter Breakdown (Max): 900V
    • Test Condition: 600V, 38A, 4.7Ohm, 15V
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
    • Current - Collector Pulsed (Icm): 193A
    • Switching Energy: 1192µJ (on), 1088µJ (off)
    • Gate Charge: 162nC
    • Td (on/off) @ 25°C: 18ns/131ns
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