- Current - Collector (Ic) (Max)
- Voltage - Collector Emitter Breakdown (Max)
- Power - Max
-
- Supplier Device Package
- Input Type
- IGBT Type
- Current - Collector Cutoff (Max)
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Test Condition
- Current - Collector Pulsed (Icm)
- Reverse Recovery Time (trr)
- NTC Thermistor
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Collector (Ic) (Max)
|
Voltage - Collector Emitter Breakdown (Max)
|
Power - Max
|
Mounting Type
|
Configuration
|
Operating Temperature
|
Supplier Device Package
|
Input Type
|
IGBT Type
|
Current - Collector Cutoff (Max)
|
Vce(on) (Max) @ Vge, Ic
|
Input Capacitance (Cies) @ Vce
|
Input
|
Test Condition
|
Current - Collector Pulsed (Icm)
|
NTC Thermistor
|
Switching Energy
|
Gate Charge
|
Td (on/off) @ 25°C
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MUBW75-17T8 | IGBT MODULE 1700V 113A 450W E3 | IXYS | E3 | 113A | 1700V | 450W | Chassis Mount | Three Phase Inverter with Brake | -40°C ~ 125°C (TJ) | E3 | Trench | 800µA | 2.4V @ 15V, 75A | 6.6nF @ 25V | Three Phase Bridge Rectifier | Yes | |||||||
| APT45GP120B2DQ2G | IGBT 1200V 113A 625W TMAX | Microchip Technology | TO-247-3 Variant | 113A | 1200V | 625W | Through Hole | -55°C ~ 150°C (TJ) | Standard | PT | 3.9V @ 15V, 45A | 600V, 45A, 5Ohm, 15V | 170A | 900µJ (on), 905µJ (off) | 185nC | 18ns/100ns | POWER MOS 7® | ||||||
| APT45GP120B2DQ2G | IGBT 1200V 113A 625W TMAX | Microsemi Corporation | TO-247-3 Variant | 113A | 1200V | 625W | Through Hole | -55°C ~ 150°C (TJ) | Standard | PT | 3.9V @ 15V, 45A | 600V, 45A, 5Ohm, 15V | 170A | 900µJ (on), 905µJ (off) | 185nC | 18ns/100ns | POWER MOS 7® |
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