Semiconductors, Transistors, Transistors - IGBTs - Arrays IC(MAX) 106A

Found: 6
  • IGBT 1200V 106A 694W TO-247
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Thunderbolt IGBT®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3 Variant
    • Power - Max: 694W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 106A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 800V, 50A, 4.7Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 150A
    • Switching Energy: 3585µJ (on), 1910µJ (off)
    • Gate Charge: 240nC
    • Td (on/off) @ 25°C: 23ns/215ns
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  • IGBT 1200V 106A 694W TO264
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Thunderbolt IGBT®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: TO-264 [L]
    • Power - Max: 694W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 106A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 800V, 50A, 1Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 150A
    • Switching Energy: 2585µJ (on), 1910µJ (off)
    • Gate Charge: 240nC
    • Td (on/off) @ 25°C: 23ns/215ns
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  • IGBT DISCRETE TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: XPT™, GenX4™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220 (IXYP)
    • Reverse Recovery Time (trr): 42ns
    • Power - Max: 500W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 106A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 960V, 25A, 5Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
    • Current - Collector Pulsed (Icm): 184A
    • Switching Energy: 4mJ (on), 3.4mJ (off)
    • Gate Charge: 57nC
    • Td (on/off) @ 25°C: 15ns/235ns
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  • IGBT 1200V 106A 694W TO264
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Thunderbolt IGBT®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: TO-264 [L]
    • Power - Max: 694W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 106A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 800V, 50A, 1Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 150A
    • Switching Energy: 2585µJ (on), 1910µJ (off)
    • Gate Charge: 240nC
    • Td (on/off) @ 25°C: 23ns/215ns
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  • DISC IGBT XPT-GENX4 TO-263D2
    IXYS
    • Manufacturer: IXYS
    • Series: GenX4™, XPT™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263HV
    • Reverse Recovery Time (trr): 42ns
    • Power - Max: 500W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 106A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 960V, 25A, 5Ohm, 15V
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
    • Current - Collector Pulsed (Icm): 184A
    • Switching Energy: 4mJ (on), 3.4mJ (off)
    • Gate Charge: 57nC
    • Td (on/off) @ 25°C: 15ns/235ns
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  • DISC IGBT XPT-GENX4 TO-247AD
    IXYS
    • Manufacturer: IXYS
    • Series: XPT™, GenX4™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247 (IXYH)
    • Reverse Recovery Time (trr): 42ns
    • Power - Max: 500W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 106A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 960V, 25A, 5Ohm, 15V
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
    • Current - Collector Pulsed (Icm): 184A
    • Switching Energy: 4mJ (on), 3.4mJ (off)
    • Gate Charge: 57nC
    • Td (on/off) @ 25°C: 15ns/235ns
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