• Manufacturer: Infineon Technologies
• Series: HEXFET®
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
• Rds On (Max) @ Id, Vgs: 42mOhm @ 22A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Freescale Semiconductor
• Package / Case: NI-400
• Supplier Device Package: NI-400
• Frequency: 2.14GHz
• Voltage - Rated: 65V
• Current - Test: 250mA
• Power - Output: 30W
• Transistor Type: LDMOS
• Gain: 13dB
• Voltage - Test: 28V

• Manufacturer: STMicroelectronics
• Series: STripFET™ II
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: DPAK
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Rds On (Max) @ Id, Vgs: 20mOhm @ 17.5A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 80W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Rochester Electronics, LLC

• Manufacturer: Infineon Technologies
• Series: CoolMOS™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
• Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
• Gate Charge (Qg) (Max) @ Vgs: 119nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 100V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 278W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: SIPMOS®
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
• Rds On (Max) @ Id, Vgs: 8Ohm @ 170mA, 10V
• Vgs(th) (Max) @ Id: 2V @ 20µA
• Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 360mW (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Rochester Electronics, LLC

• Manufacturer: Vishay Siliconix
• Series: TrenchFET® Gen IV
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: PowerPAK® SO-8
• Supplier Device Package: PowerPAK® SO-8
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 51.4A (Ta), 80A (Tc)
• Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4460pF @ 15V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): +16V, -12V

• Manufacturer: Rochester Electronics, LLC
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
• Supplier Device Package: I-PAK
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
• Rds On (Max) @ Id, Vgs: 65mOhm @ 9A, 5V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 2.1W (Ta), 55W (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs (Max): ±15V

• Manufacturer: Ampleon USA Inc.
• Package / Case: SOT-539B
• Supplier Device Package: SOT539B
• Frequency: 2.5GHz ~ 2.7GHz
• Voltage - Rated: 65V
• Current - Test: 1.2A
• Power - Output: 30W
• Transistor Type: LDMOS (Dual), Common Source
• Gain: 16.5dB
• Voltage - Test: 28V
• Current Rating (Amps): 37A

• Manufacturer: Nexperia USA Inc.
• Series: Automotive, AEC-Q101, TrenchMOS™
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: SC-100, SOT-669
• Supplier Device Package: LFPAK56, Power-SO8
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 30.2nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 5137pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 167W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs (Max): ±10V

• Manufacturer: Infineon Technologies
• Series: Automotive, AEC-Q101, OptiMOS™
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3-2
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V
• Vgs(th) (Max) @ Id: 4V @ 90µA
• Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 150W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Vishay Siliconix
• Series: TrenchFET®
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252, (D-Pak)
• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 37.1A (Tc)
• Rds On (Max) @ Id, Vgs: 43mOhm @ 9.2A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 50V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: onsemi
• Series: QFET®
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
• Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.5A, 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±30V

• Manufacturer: Microsemi Corporation
• Series: Military, MIL-PRF-19500/562
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-204AA, TO-3
• Supplier Device Package: TO-204AA (TO-3)
• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 4W (Ta), 75W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V