• Manufacturer: Rochester Electronics, LLC
• Series: TrenchMOS™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Supplier Device Package: I2PAK
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 11.96pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 349W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 40V
• Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Toshiba Semiconductor and Storage
• Series: U-MOSVI
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: 6-WDFN Exposed Pad
• Supplier Device Package: 6-UDFNB (2x2)
• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Rds On (Max) @ Id, Vgs: 32.4mOhm @ 3A, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1W (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs (Max): ±8V

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
• Supplier Device Package: I-PAK
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc)
• Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1563pF @ 12V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc)

• Manufacturer: STMicroelectronics
• Series: STripFET™ F7
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PowerFlat™ (5x6)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 120A (Tc)
• Rds On (Max) @ Id, Vgs: 2.4mOhm @ 16A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 79.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4825pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 4.8W (Ta), 166W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Torex Semiconductor Ltd
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89
• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
• Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V
• Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 2W (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: NXP USA Inc.
• Series: TrenchMOS™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 69.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 9150pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 234W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs (Max): ±10V

• Manufacturer: Toshiba Semiconductor and Storage
• Series: U-MOSVIII-H
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
• Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V
• Vgs(th) (Max) @ Id: 4V @ 300µA
• Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 72W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Rochester Electronics, LLC
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
• Supplier Device Package: I-PAK
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
• Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 5V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1.14pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs (Max): ±15V

• Manufacturer: Wolfspeed, Inc.
• Package / Case: H-37248-4
• Supplier Device Package: H-37248-4
• Frequency: 2.69GHz
• Voltage - Rated: 65V
• Current - Test: 280mA
• Power - Output: 28W
• Transistor Type: LDMOS
• Gain: 15dB
• Voltage - Test: 28V

• Manufacturer: Renesas Electronics America
• Mounting Type: Surface Mount
• Operating Temperature: 150°C
• Package / Case: SC-100, SOT-669
• Supplier Device Package: 5-LFPAK
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
• Rds On (Max) @ Id, Vgs: 15mOhm @ 12.5A, 10V
• Vgs(th) (Max) @ Id: 6V @ 20mA
• Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 10V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 30W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
• Vgs (Max): ±20V

• Manufacturer: onsemi
• Series: PowerTrench®
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
• Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15.3A, 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2819pF @ 20V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 3W (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: IXYS
• Series: PolarVHV™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
• Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 125W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Vishay Siliconix
• Series: TrenchFET®
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta)
• Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: CoolMOS™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3-1
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 550V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 440µA
• Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 100V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 104W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V