• Manufacturer: Vishay Siliconix
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
• Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
• Vgs (Max): ±10V

• Manufacturer: Micro Commercial Co
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 170mA
• Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
• Vgs(th) (Max) @ Id: 2.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 350mW
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: SIPMOS®
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
• Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 40W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Rohm Semiconductor
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: 8-PowerUDFN
• Supplier Device Package: HUML2020L8
• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
• Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 10V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 2W (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs (Max): ±8V

• Manufacturer: Vishay Siliconix
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3 (TO-236)
• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta)
• Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 700mW (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
• Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 47W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±30V

• Manufacturer: IXYS
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-247-3
• Supplier Device Package: PLUS247™-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 2500V
• Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
• Rds On (Max) @ Id, Vgs: 10Ohm @ 1.5A, 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 417W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: HEXFET®
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
• Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 68W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±16V

• Manufacturer: Alpha & Omega Semiconductor Inc.
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252, (D-Pak)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 46A (Tc)
• Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 30V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: CEL
• Package / Case: 4-Micro-X
• Supplier Device Package: 4-Micro-X
• Frequency: 12GHz
• Voltage - Rated: 4V
• Current - Test: 10mA
• Power - Output: 125mW
• Transistor Type: pHEMT FET
• Gain: 13.7dB
• Voltage - Test: 2V
• Noise Figure: 0.5dB
• Current Rating (Amps): 15mA

• Manufacturer: Rochester Electronics, LLC
• Series: QFET®
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-3PF
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
• Rds On (Max) @ Id, Vgs: 960mOhm @ 3.6A, 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 120W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±30V

• Manufacturer: Rochester Electronics, LLC

• Manufacturer: onsemi
• Series: SuperFET™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
• Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 50W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±30V

• Manufacturer: Cree/Wolfspeed
• Package / Case: HBSOF-4-1
• Supplier Device Package: PG-HBSOF-4-1
• Frequency: 869MHz ~ 960MHz
• Voltage - Rated: 105V
• Current - Test: 900mA
• Power - Output: 240W
• Transistor Type: LDMOS
• Gain: 22.5dB
• Voltage - Test: 48V
• Current Rating (Amps): 10µA

• Manufacturer: NTE Electronics, Inc