-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
---|---|---|---|---|---|---|---|---|---|---|---|---|
MRF101AN-START | MRF101AN RF ESSENTIALS COMPONENT | NXP USA Inc. | TO-220-3 | 115W | 1.8MHz ~ 250MHz | 133V | 10µA | TO-220-3 | LDMOS | 21.1dB | 50V | 100mA |
MRF101AN | RF TRANSISTOR 100W TO-220 | NXP USA Inc. | TO-220-3 | 115W | 1.8MHz ~ 250MHz | 133V | 10µA | TO-220-3 | LDMOS | 21.1dB | 50V | 100mA |
MRF101BN | RF MOSFET LDMOS 50V TO220-3 | NXP USA Inc. | TO-220-3 | 115W | 1.8MHz ~ 250MHz | 133V | 10µA | TO-220-3 | LDMOS | 21.1dB | 50V | 100mA |
- 10
- 15
- 50
- 100