• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 6
Partnumber Description Manufacturer
Supplier Device Package
Power - Output
Frequency
Voltage - Rated
Package / Case
Transistor Type
Gain
Voltage - Test
Current - Test
BLF871,112 RF FET LDMOS 89V 19DB SOT467C Ampleon USA Inc. SOT467C 100W 860MHz 89V SOT-467C LDMOS 19dB 40V 500mA
CLF3H0035-100U CLF3H0035-100U/SOT467/TRAY Ampleon USA Inc. SOT467C 100W 0Hz ~ 3.5GHz 150V SOT-467C HEMT 15dB 50V 300mA
CLF1G0035-100,112 RF MOSFET HEMT 50V SOT467C Ampleon USA Inc. SOT467C 100W 3GHz 150V SOT-467C GaN HEMT 12dB 50V 330mA
CLF1G0035-100H CLF1G0035-100 - 100W BROADBAND R Ampleon USA Inc. SOT467C 100W 3GHz 150V SOT467C GaN HEMT 12dB 50V 330mA
CLF1G0035-100,112 RF SMALL SIGNAL FIELD-EFFECT TRA NXP USA Inc. SOT467C 100W 3GHz 150V SOT-467C GaN HEMT 12dB 50V 330mA
CLF1G0035-100 CLF1G0035-100 - 100W BROADBAND R Rochester Electronics, LLC SOT467C 100W 3.5GHz 150V SOT-467C HEMT 12dB 50V 330mA
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  • 50
  • 100