-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
---|---|---|---|---|---|---|---|---|---|---|---|
MRF21010LSR5 | FET RF 65V 2.17GHZ NI-360S | NXP USA Inc. | NI-360S | 10W | 2.17GHz | 65V | NI-360S | LDMOS | 13.5dB | 28V | 100mA |
MRF21010LSR1 | FET RF 65V 2.17GHZ NI-360S | NXP USA Inc. | NI-360S | 10W | 2.17GHz | 65V | NI-360S | LDMOS | 13.5dB | 28V | 100mA |
- 10
- 15
- 50
- 100