-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
---|---|---|---|---|---|---|---|---|---|---|---|
MRFG35010R5 | RF POWER N-CHANNEL, MOSFET | Freescale Semiconductor | NI-360HF | 10W | 3.55GHz | 15V | NI-360HF | pHEMT FET | 10dB | 12V | 180mA |
MRFG35010R5 | FET RF 15V 3.55GHZ NI360HF | NXP USA Inc. | NI-360HF | 10W | 3.55GHz | 15V | NI-360HF | pHEMT FET | 10dB | 12V | 180mA |
MRFG35010R1 | FET RF 15V 3.55GHZ NI360HF | NXP USA Inc. | NI-360HF | 10W | 3.55GHz | 15V | NI-360HF | pHEMT FET | 10dB | 12V | 180mA |
MRFG35010R5 | RF POWER N-CHANNEL, MOSFET | Rochester Electronics, LLC | NI-360HF | 10W | 3.55GHz | 15V | NI-360HF | pHEMT FET | 10dB | 12V | 180mA |
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