-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
---|---|---|---|---|---|---|---|---|---|---|---|---|
A2T27S007NT1 | A2T27S007 - 400-2700 MHZ, 28.8 D | NXP Semiconductors | 16-DFN (4x6) | 28.8dBm | 400MHz ~ 2.7GHz | 65V | 10µA | 16-VDFN Exposed Pad | LDMOS | 18.9dB | 28V | 60mA |
A2T27S007NT1 | AIRFAST RF POWER LDMOS TRANSISTO | NXP USA Inc. | 16-DFN (4x6) | 28.8dBm | 728MHz ~ 3.6GHz | 28V | 16-VDFN Exposed Pad | LDMOS |
- 10
- 15
- 50
- 100