• Supplier Device Package
  • Manufacturer
  • Power - Output
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 4
Partnumber Description Manufacturer
Supplier Device Package
Power - Max
Mounting Type
Package / Case
Operating Temperature
FET Type
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Series
FDMQ8403 POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor 12-MLP (5x4.5) 1.9W Surface Mount 12-WDFN Exposed Pad -55°C ~ 150°C (TJ) 4 N-Channel (Half Bridge) 100V 3.1A Standard 110mOhm @ 3A, 10V 4V @ 250µA 5nC @ 10V 215pF @ 15V GreenBridge™ PowerTrench®
FDMQ86530L MOSFET 4N-CH 60V 8A 12MLP onsemi 12-MLP (5x4.5) 1.9W Surface Mount 12-WDFN Exposed Pad -55°C ~ 150°C (TJ) 4 N-Channel (Half Bridge) 60V 8A Logic Level Gate 17.5mOhm @ 8A, 10V 3V @ 250µA 33nC @ 10V 2295pF @ 30V GreenBridge™ PowerTrench®
FDMQ8403 MOSFET 4N-CH 100V 3.1A 12MLP onsemi 12-MLP (5x4.5) 1.9W Surface Mount 12-WDFN Exposed Pad -55°C ~ 150°C (TJ) 4 N-Channel (Half Bridge) 100V 3.1A Standard 110mOhm @ 3A, 10V 4V @ 250µA 5nC @ 10V 215pF @ 15V GreenBridge™ PowerTrench®
FDMQ8203 MOSFET 2N/2P-CH 100V/80V 12-MLP onsemi 12-MLP (5x4.5) 2.5W Surface Mount 12-WDFN Exposed Pad -55°C ~ 150°C (TJ) 2 N and 2 P-Channel (Half Bridge) 100V, 80V 3.4A, 2.6A Logic Level Gate 110mOhm @ 3A, 10V 4V @ 250µA 5nC @ 10V 210pF @ 50V GreenBridge™ PowerTrench®
  • 10
  • 15
  • 50
  • 100