• Supplier Device Package
  • Manufacturer
  • Power - Output
  • Voltage - Rated
Found: 4
Partnumber Description Manufacturer
Supplier Device Package
Mounting Type
Package / Case
Technology
Operating Temperature
FET Type
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Series
SIE862DF-T1-GE3 MOSFET N-CH 30V 50A POLARPAK Vishay Siliconix 10-PolarPAK® (U) Surface Mount 10-PolarPAK® (U) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 5.2W (Ta), 104W (Tc) 30V 50A (Tc) 3.2mOhm @ 20A, 10V 10V 2.2V @ 250µA 75nC @ 10V 3100pF @ 15V ±20V TrenchFET®
SIE844DF-T1-E3 MOSFET N-CH 30V 44.5A POLARPAK Vishay Siliconix 10-PolarPAK® (U) Surface Mount 10-PolarPAK® (U) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 5.2W (Ta), 25W (Tc) 30V 44.5A (Tc) 7mOhm @ 12.1A, 10V 4.5V, 10V 3V @ 250µA 44nC @ 10V 2150pF @ 15V ±20V TrenchFET®
SIE844DF-T1-GE3 MOSFET N-CH 30V 44.5A POLARPAK Vishay Siliconix 10-PolarPAK® (U) Surface Mount 10-PolarPAK® (U) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 5.2W (Ta), 25W (Tc) 30V 44.5A (Tc) 7mOhm @ 12.1A, 10V 4.5V, 10V 3V @ 250µA 44nC @ 10V 2150pF @ 15V ±20V TrenchFET®
SIE864DF-T1-GE3 MOSFET N-CH 30V 45A POLARPAK Vishay Siliconix 10-PolarPAK® (U) Surface Mount 10-PolarPAK® (U) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 5.2W (Ta), 25W (Tc) 30V 45A (Tc) 5.6mOhm @ 20A, 10V 4.5V, 10V 2V @ 250µA 38nC @ 10V 1510pF @ 15V ±20V TrenchFET®