• Supplier Device Package
  • Manufacturer
  • Power - Output
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 2
Partnumber Description Manufacturer
Supplier Device Package
Mounting Type
Package / Case
Technology
Operating Temperature
FET Type
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Series
SIE836DF-T1-GE3 MOSFET N-CH 200V 18.3A POLARPAK Vishay Siliconix 10-PolarPAK® (SH) Surface Mount 10-PolarPAK® (SH) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 5.2W (Ta), 104W (Tc) 200V 18.3A (Tc) 130mOhm @ 4.1A, 10V 10V 4.5V @ 250µA 41nC @ 10V 1200pF @ 100V ±30V TrenchFET®
SIE836DF-T1-E3 MOSFET N-CH 200V 18.3A POLARPAK Vishay Siliconix 10-PolarPAK® (SH) Surface Mount 10-PolarPAK® (SH) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 5.2W (Ta), 104W (Tc) 200V 18.3A (Tc) 130mOhm @ 4.1A, 10V 10V 4.5V @ 250µA 41nC @ 10V 1200pF @ 100V ±30V TrenchFET®
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