• Supplier Device Package
  • Manufacturer
  • Power - Output
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 1
Partnumber Description Manufacturer
Supplier Device Package
Mounting Type
Package / Case
Technology
Operating Temperature
FET Type
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Series
SIE804DF-T1-GE3 MOSFET N-CH 150V 37A POLARPAK Vishay Siliconix 10-PolarPAK® (LH) Surface Mount 10-PolarPAK® (LH) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 5.2W (Ta), 125W (Tc) 150V 37A (Tc) 38mOhm @ 7.6A, 10V 6V, 10V 3V @ 250µA 105nC @ 10V 3000pF @ 50V ±20V TrenchFET®
  • 10
  • 15
  • 50
  • 100