- Power - Output
- Manufacturer
- Supplier Device Package
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Gain
|
Noise Figure
|
Voltage - Test
|
Current - Test
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NE3515S02-A | FET RF HFET 12GHZ 2V 10MA S02 | CEL | S02 | 14dBm | 12GHz | 4V | 88mA | 4-SMD, Flat Leads | HFET | 12.5dB | 0.3dB | 2V | 10mA |
NE3515S02-T1C-A | FET RF HFET 12GHZ 2V 10MA S02 | CEL | S02 | 14dBm | 12GHz | 4V | 88mA | 4-SMD, Flat Leads | HFET | 12.5dB | 0.3dB | 2V | 10mA |
NE3515S02-T1D-A | FET RF HFET 12GHZ 2V 10MA S02 | CEL | S02 | 14dBm | 12GHz | 4V | 88mA | 4-SMD, Flat Leads | HFET | 12.5dB | 0.3dB | 2V | 10mA |
NE3515S02-T1D-A | SMALL SIGNAL N-CHANNEL MOSFET | Renesas Electronics America Inc | S02 | 14dBm | 12GHz | 4V | 88mA | 4-SMD, Flat Leads | HFET | 12.5dB | 0.3dB | 2V | 10mA |
NE3515S02-T1C-A | SMALL SIGNAL N-CHANNEL MOSFET | Renesas Electronics America Inc | S02 | 14dBm | 12GHz | 4V | 88mA | 4-SMD, Flat Leads | HFET | 12.5dB | 0.3dB | 2V | 10mA |
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