- Power - Output
- Manufacturer
- Supplier Device Package
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CG2H40010P | 10W, GAN HEMT, 28V, DC-4.0GHZ, P | Cree/Wolfspeed | 440196 | 10W | 8GHz | 120V | 440196 | HEMT | 16.7dB | 28V | 200mA | GaN | |
| MAGX-000035-01000P | TRANSISTOR RF 10W GAN | MACOM Technology Solutions | 10W | 3.5GHz | 65V | 500mA | HEMT | 17dB | 50V | 30mA | |||
| MRF282ZR1 | FET RF 65V 2GHZ NI-200Z | NXP USA Inc. | NI-200Z | 10W | 2GHz | 65V | NI-200Z | LDMOS | 11.5dB | 26V | 75mA | ||
| MRF6S9045MR1 | FET RF 68V 880MHZ TO-270-2 | NXP USA Inc. | TO-270-2 | 10W | 880MHz | 68V | TO-270-2 | LDMOS | 22.7dB | 28V | 350mA | ||
| MRFG35010R5 | RF POWER N-CHANNEL, MOSFET | Rochester Electronics, LLC | NI-360HF | 10W | 3.55GHz | 15V | NI-360HF | pHEMT FET | 10dB | 12V | 180mA |
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