• Power - Output
  • Manufacturer
  • Supplier Device Package
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 43
Partnumber Description Manufacturer
Supplier Device Package
Power - Output
Frequency
Voltage - Rated
Current Rating (Amps)
Package / Case
Transistor Type
Gain
Voltage - Test
Current - Test
BLA6H0912LS-1000U RF FET LDMOS 100V 15.5DB SOT539B Ampleon USA Inc. SOT539B 1000W 1.03GHz 100V SOT-539B LDMOS (Dual), Common Source 15.5dB 50V 200mA
BLF989ESU BLF989ES/SOT539/TRAY Ampleon USA Inc. SOT539B 1000W 470MHz ~ 700MHz 108V 2.8µA SOT-539B LDMOS (Dual), Common Source 20dB 50V 600mA
MRF6VP11KHR5 RF POWER FIELD-EFFECT TRANSISTOR Freescale Semiconductor NI-1230S-4 GULL 1000W 130MHz 110V NI-1230S-4 GW LDMOS (Dual) 26dB 50V 150mA
MRF6VP121KHR5178 LATERAL N CHANNEL BROADBAND RF , Freescale Semiconductor NI-1230 1000W 965MHz ~ 1.215GHz 110V 100µA NI-1230 LDMOS (Dual) 21.4dB 50V 150mA
MRF6VP41KHSR6 FET RF 2CH 110V 450MHZ NI1230S NXP USA Inc. NI-1230S 1000W 450MHz 110V NI-1230S LDMOS (Dual) 20dB 50V 150mA
MRF6VP11KGSR5 FET RF 2CH 110V 130MHZ NI-1230S NXP USA Inc. NI-1230S-4 GULL 1000W 130MHz 110V NI-1230S-4 GW LDMOS (Dual) 26dB 50V 150mA
MMRF1312GSR5 TRANS 960-1215MHZ 1000W PEAK 50V NXP USA Inc. NI-1230-4S GULL 1000W 1.03GHz 112V NI-1230-4S GW LDMOS (Dual) 19.6dB 50V 100mA
MRF6VP11KHR6 FET RF 2CH 110V 130MHZ NI-1230 NXP USA Inc. NI-1230 1000W 130MHz 110V NI-1230 LDMOS (Dual) 26dB 50V 150mA
MRF6VP121KHSR5 FET RF 2CH 110V 1.03GHZ NI1230H NXP USA Inc. NI-1230S 1000W 1.03GHz 110V NI-1230S LDMOS (Dual) 20dB 50V 150mA
AFV121KHR5 IC TRANS RF LDMOS NXP USA Inc. NI-1230-4H 1000W 960MHz ~ 1.22GHz 112V SOT-979A LDMOS (Dual) 19.6dB 50V 100mA
MRF6VP121KHR5 FET RF 2CH 110V 1.03GHZ NI1230H NXP USA Inc. NI-1230 1000W 1.03GHz 110V NI-1230 LDMOS (Dual) 20dB 50V 150mA
MRF6VP21KHR6 FET RF 2CH 110V 225MHZ NI1230 NXP USA Inc. NI-1230 1000W 225MHz 110V NI-1230 LDMOS (Dual) 24dB 50V 150mA
MMRF1007HR5 FET RF 2CH 110V 1.03GHZ NI-1230 NXP USA Inc. NI-1230-4H 1000W 1.03GHz 110V NI-1230-4H LDMOS (Dual) 20dB 50V 150mA
MMRF1314GSR5 TRANS 960-1215MHZ 1000W PEAK 50V NXP USA Inc. NI-1230-4S GULL 1000W 1.4GHz 105V NI-1230-4S GW LDMOS (Dual) 17.7dB 50V 100mA
MRF6VP41KHR7 POWER, N-CHANNEL, MOSFET Rochester Electronics, LLC NI-1230 1000W 450MHz 110V NI-1230 LDMOS (Dual) 20dB 50V 150mA
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