• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 6
Partnumber Description Manufacturer
Supplier Device Package
Power - Output
Frequency
Voltage - Rated
Current Rating (Amps)
Package / Case
Transistor Type
Gain
Voltage - Test
Current - Test
MRF9120LR3 FET RF 65V 880MHZ NI-860 NXP USA Inc. NI-860 120W 880MHz 65V NI-860 LDMOS 16.5dB 26V 1A
MRF7S35120HSR5 FET RF 65V 3.5GHZ NI-780S NXP USA Inc. NI-780S 120W 3.1GHz ~ 3.5GHz 65V NI-780S LDMOS 12dB 32V 150mA
MRF9120LR5 FET RF 65V 880MHZ NI-860 NXP USA Inc. NI-860 120W 880MHz 65V NI-860 LDMOS 16.5dB 26V 1A
A2V07H525-04NR6 AIRFAST RF LDMOS WIDEBAND INTEGR NXP USA Inc. OM-1230-4L 120W 595MHz ~ 851MHz 105V 10µA OM-1230-4L LDMOS 17.5dB 48V 700mA
A2V09H525-04NR6 AIRFAST RF LDMOS WIDEBAND INTEGR NXP USA Inc. OM-1230-4L 120W 720MHz ~ 960MHz 105V 10µA OM-1230-4L LDMOS 18.9dB 48V 688mA
MRF7S35120HSR3 FET RF 65V 3.5GHZ NI-780S NXP USA Inc. NI-780S 120W 3.1GHz ~ 3.5GHz 65V NI-780S LDMOS 12dB 32V 150mA
  • 10
  • 15
  • 50
  • 100