-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
---|---|---|---|---|---|---|---|---|---|---|---|
MRFG35010R5 | FET RF 15V 3.55GHZ NI360HF | NXP USA Inc. | NI-360HF | 10W | 3.55GHz | 15V | NI-360HF | pHEMT FET | 10dB | 12V | 180mA |
MRF21045LR3 | FET RF 65V 2.17GHZ NI-400 | NXP USA Inc. | NI-400-240 | 10W | 2.17GHz | 65V | NI-400 | LDMOS | 15dB | 28V | 500mA |
MRF5S21045MBR1 | FET RF 68V 2.17GHZ TO272-4 | NXP USA Inc. | TO-272 WB-4 | 10W | 2.11GHz ~ 2.17GHz | 68V | TO-272-4 | LDMOS | 14.5dB | 28V | 500mA |
MMRF1015GNR1 | FET RF 68V 960MHZ | NXP USA Inc. | TO-270-2 GULL | 10W | 960MHz | 68V | TO-270BA | LDMOS | 18dB | 28V | 125mA |
MRF6S9045NR1 | RF MOSFET LDMOS 28V TO270-2 | NXP USA Inc. | TO-270-2 | 10W | 880MHz | 68V | TO-270AA | LDMOS | 22.7dB | 28V | 350mA |
MRF282SR1 | FET RF 65V 2GHZ NI-200S | NXP USA Inc. | NI-200S | 10W | 2GHz | 65V | NI-200S | LDMOS | 11.5dB | 26V | 75mA |
MRF5S21045NBR1 | FET RF 68V 2.12GHZ TO272-4 | NXP USA Inc. | TO-272 WB-4 | 10W | 2.12GHz | 68V | TO-272BB | LDMOS | 14.5dB | 28V | 500mA |
MRF6S9045MBR1 | FET RF 68V 880MHZ TO-272-2 | NXP USA Inc. | TO-272-2 | 10W | 880MHz | 68V | TO-272-2 | LDMOS | 22.7dB | 28V | 350mA |
MRF6S20010GNR1 | RF MOSFET LDMOS 28V TO270-2 GULL | NXP USA Inc. | TO-270-2 GULL | 10W | 2.17GHz | 68V | TO-270BA | LDMOS | 15.5dB | 28V | 130mA |
MRF6V2010NBR5 | FET RF 110V 220MHZ TO-272-2 | NXP USA Inc. | TO-272-2 | 10W | 220MHz | 110V | TO-272BC | LDMOS | 23.9dB | 50V | 30mA |
MRF21045LSR5 | FET RF 65V 2.17GHZ NI-400S | NXP USA Inc. | NI-400S | 10W | 2.16GHz ~ 2.17GHz | 65V | NI-400S | LDMOS | 15dB | 28V | 500mA |
MRFE6S9045NR1 | FET RF 66V 880MHZ TO-270-2 | NXP USA Inc. | TO-270-2 | 10W | 880MHz | 66V | TO-270AA | LDMOS | 22.1dB | 28V | 350mA |
MRF6V10010NR4 | FET RF 100V 1.09GHZ PLD-1.5 | NXP USA Inc. | PLD-1.5 | 10W | 1.09GHz | 100V | PLD-1.5 | LDMOS | 25dB | 50V | 10mA |
CLF1G0060S-10U | RF SMALL SIGNAL FIELD-EFFECT TRA | NXP USA Inc. | SOT-1227B | 10W | 3GHz ~ 3.5GHz | 150V | SOT-1227B | GaN HEMT | 14.5dB | 50V | 50mA |
MRFG35010R1 | FET RF 15V 3.55GHZ NI360HF | NXP USA Inc. | NI-360HF | 10W | 3.55GHz | 15V | NI-360HF | pHEMT FET | 10dB | 12V | 180mA |
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