• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 46
Partnumber Description Manufacturer
Supplier Device Package
Power - Output
Frequency
Voltage - Rated
Package / Case
Transistor Type
Gain
Voltage - Test
Current - Test
MRFG35010R5 FET RF 15V 3.55GHZ NI360HF NXP USA Inc. NI-360HF 10W 3.55GHz 15V NI-360HF pHEMT FET 10dB 12V 180mA
MRF21045LR3 FET RF 65V 2.17GHZ NI-400 NXP USA Inc. NI-400-240 10W 2.17GHz 65V NI-400 LDMOS 15dB 28V 500mA
MRF5S21045MBR1 FET RF 68V 2.17GHZ TO272-4 NXP USA Inc. TO-272 WB-4 10W 2.11GHz ~ 2.17GHz 68V TO-272-4 LDMOS 14.5dB 28V 500mA
MMRF1015GNR1 FET RF 68V 960MHZ NXP USA Inc. TO-270-2 GULL 10W 960MHz 68V TO-270BA LDMOS 18dB 28V 125mA
MRF6S9045NR1 RF MOSFET LDMOS 28V TO270-2 NXP USA Inc. TO-270-2 10W 880MHz 68V TO-270AA LDMOS 22.7dB 28V 350mA
MRF282SR1 FET RF 65V 2GHZ NI-200S NXP USA Inc. NI-200S 10W 2GHz 65V NI-200S LDMOS 11.5dB 26V 75mA
MRF5S21045NBR1 FET RF 68V 2.12GHZ TO272-4 NXP USA Inc. TO-272 WB-4 10W 2.12GHz 68V TO-272BB LDMOS 14.5dB 28V 500mA
MRF6S9045MBR1 FET RF 68V 880MHZ TO-272-2 NXP USA Inc. TO-272-2 10W 880MHz 68V TO-272-2 LDMOS 22.7dB 28V 350mA
MRF6S20010GNR1 RF MOSFET LDMOS 28V TO270-2 GULL NXP USA Inc. TO-270-2 GULL 10W 2.17GHz 68V TO-270BA LDMOS 15.5dB 28V 130mA
MRF6V2010NBR5 FET RF 110V 220MHZ TO-272-2 NXP USA Inc. TO-272-2 10W 220MHz 110V TO-272BC LDMOS 23.9dB 50V 30mA
MRF21045LSR5 FET RF 65V 2.17GHZ NI-400S NXP USA Inc. NI-400S 10W 2.16GHz ~ 2.17GHz 65V NI-400S LDMOS 15dB 28V 500mA
MRFE6S9045NR1 FET RF 66V 880MHZ TO-270-2 NXP USA Inc. TO-270-2 10W 880MHz 66V TO-270AA LDMOS 22.1dB 28V 350mA
MRF6V10010NR4 FET RF 100V 1.09GHZ PLD-1.5 NXP USA Inc. PLD-1.5 10W 1.09GHz 100V PLD-1.5 LDMOS 25dB 50V 10mA
CLF1G0060S-10U RF SMALL SIGNAL FIELD-EFFECT TRA NXP USA Inc. SOT-1227B 10W 3GHz ~ 3.5GHz 150V SOT-1227B GaN HEMT 14.5dB 50V 50mA
MRFG35010R1 FET RF 15V 3.55GHZ NI360HF NXP USA Inc. NI-360HF 10W 3.55GHz 15V NI-360HF pHEMT FET 10dB 12V 180mA
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