• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 24
Partnumber Description Manufacturer
Supplier Device Package
Power - Output
Frequency
Voltage - Rated
Current Rating (Amps)
Package / Case
Transistor Type
Gain
Voltage - Test
Current - Test
MRF5S9101NR1 FET RF 68V 960MHZ TO-270-4 NXP USA Inc. TO-270 WB-4 100W 960MHz 68V TO-270AB LDMOS 17.5dB 26V 700mA
AFG24S100HR5 IC TRANS RF LDMOS NXP USA Inc. NI-360H-2SB 100W 1MHz ~ 2.5GHz 50V NI-360H-2SB 16.3dB
MRF6S18100NR1 FET RF 68V 1.99GHZ TO2704 NXP USA Inc. TO-270 WB-4 100W 1.99GHz 68V TO-270AB LDMOS 14.5dB 28V 900mA
MRF6S18100NBR1 FET RF 68V 1.99GHZ TO2724 NXP USA Inc. TO-272 WB-4 100W 1.99GHz 68V TO-272BB LDMOS 14.5dB 28V 900mA
MMRF1020-04NR3 RF MOSFET LDMOS DL 48V OM780-4 NXP USA Inc. OM-780-4L 100W 920MHz 105V OM-780-4L LDMOS (Dual) 19.5dB 48V 860mA
MRFE6VP100HSR5 FET RF 2CH 133V 512MHZ NI780 NXP USA Inc. NI-780S-4L 100W 512MHz 133V NI-780S-4L LDMOS 26dB 50V 100mA
MRF5S9101NBR1 FET RF 68V 960MHZ TO-272-4 NXP USA Inc. TO-272 WB-4 100W 960MHz 68V TO-272BB LDMOS 17.5dB 26V 700mA
AFV09P350-04NR3 FET RF 2CH 105V 920MHZ OM780-4 NXP USA Inc. OM-780-4L 100W 920MHz 105V OM-780-4L LDMOS (Dual) 19.5dB 48V 860mA
MRF8P9300HSR5 FET RF 2CH 70V 960MHZ NI-1230HS NXP USA Inc. NI-1230S 100W 960MHz 70V NI-1230S LDMOS (Dual) 19.4dB 28V 2.4A
MMRF1020-04GNR3 FET RF 2CH 105V 920MHZ OM780-4G NXP USA Inc. OM-780G-4L 100W 920MHz 105V OM-780G-4L LDMOS (Dual) 19.5dB 48V 860mA
BLF4G20LS-110B,112 FET RF 65V 1.99GHZ SOT502B NXP USA Inc. SOT502B 100W 1.93GHz ~ 1.99GHz 65V 12A SOT-502B LDMOS 13.4dB 28V 650mA
AFV09P350-04GNR3 RF MOSFET LDMOS DL 48V OM780G-4L NXP USA Inc. OM-780G-4L 100W 920MHz 105V OM-780G-4L LDMOS (Dual) 19.5dB 48V 860mA
MRF8P9300HR6 FET RF 2CH 70V 960MHZ NI-1230H NXP USA Inc. NI-1230 100W 960MHz 70V NI-1230 LDMOS (Dual) 19.4dB 28V 2.4A
CLF1G0035-100P RF SMALL SIGNAL FIELD-EFFECT TRA NXP USA Inc. LDMOST 100W 3.5GHz 150V SOT-1228A HEMT 12.5dB 50V 330mA
BLF4G20S-110B,112 FET RF 65V 1.99GHZ SOT502B NXP USA Inc. SOT502B 100W 1.93GHz ~ 1.99GHz 65V 12A SOT-502B LDMOS 13.5dB 28V 700mA
  • 10
  • 15
  • 50
  • 100