• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 24
Partnumber Description Manufacturer
Supplier Device Package
Power - Output
Frequency
Voltage - Rated
Current Rating (Amps)
Package / Case
Transistor Type
Gain
Voltage - Test
Current - Test
MRF5S9101MBR1 FET RF 68V 960MHZ TO2724 NXP USA Inc. TO-272 WB-4 100W 960MHz 68V TO-272BB LDMOS 17.5dB 26V 700mA
BLF4G20-110B,112 FET RF 65V 1.99GHZ SOT502A NXP USA Inc. LDMOST 100W 1.93GHz ~ 1.99GHz 65V 12A SOT-502A LDMOS 13.5dB 28V 700mA
MMRF1305HSR5 FET RF 2CH 133V 512MHZ NI780S-4 NXP USA Inc. NI-780S-4L 100W 512MHz 133V NI-780S-4L LDMOS (Dual) 26dB 50V 100mA
MRF8P9300HSR6 FET RF 2CH 70V 960MHZ NI-1230HS NXP USA Inc. NI-1230S 100W 960MHz 70V NI-1230S LDMOS (Dual) 19.4dB 28V 2.4A
MRFE6VP100HR5 RF MOSFET LDMOS 50V NI780-4 NXP USA Inc. NI-780-4 100W 512MHz 133V NI-780-4 LDMOS 26dB 50V 100mA
CLF1G0035-100,112 RF SMALL SIGNAL FIELD-EFFECT TRA NXP USA Inc. SOT467C 100W 3GHz 150V SOT-467C GaN HEMT 12dB 50V 330mA
A3T09S100NR1 AIRFAST RF POWER LDMOS TRANSISTO NXP USA Inc. TO-270-2 100W 136MHz ~ 941MHz 65V 10µA TO-270-2 LDMOS 22.8dB 28V 450mA
MRF5S9101MR1 FET RF 68V 960MHZ TO2704 NXP USA Inc. TO-270 WB-4 100W 960MHz 68V TO-270AB LDMOS 17.5dB 26V 700mA
MMRF1305HR5 FET RF 2CH 133V 512MHZ NI-780-4 NXP USA Inc. NI-780-4 100W 512MHz 133V NI-780-4 LDMOS (Dual) 26dB 50V 100mA
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