Found: 32
  • MOSFET 2N-CH 200V 372A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 372A
    • Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 10mA
    • Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
    • Power - Max: 1250W
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  • MOSFET 2N-CH 100V 495A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 495A
    • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 10mA
    • Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
    • Power - Max: 1250W
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  • MOSFET 2N-CH 100V 278A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 2 N-Channel (Dual) Asymmetrical
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 278A
    • Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
    • Power - Max: 780W
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  • MOSFET 2N-CH 800V 56A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 56A
    • Rds On (Max) @ Id, Vgs: 75mOhm @ 28A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 364nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9015pF @ 25V
    • Power - Max: 568W
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  • MOSFET 2N-CH 1200V 50A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 50A
    • Rds On (Max) @ Id, Vgs: 240mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 6mA
    • Gate Charge (Qg) (Max) @ Vgs: 600nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
    • Power - Max: 1250W
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  • MOSFET 2N-CH 1200V 60A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 60A
    • Rds On (Max) @ Id, Vgs: 175mOhm @ 30A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 10mA
    • Gate Charge (Qg) (Max) @ Vgs: 748nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 25V
    • Power - Max: 1250W
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  • MOSFET 2N-CH 500V 90A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 2 N-Channel (Dual) Asymmetrical
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 90A
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
    • Power - Max: 694W
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  • MOSFET 2N-CH 500V 180A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 180A
    • Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 10mA
    • Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
    • Power - Max: 1250W
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  • MOSFET 4N-CH 200V 175A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 4 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 175A
    • Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
    • Power - Max: 694W
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  • MOSFET N-CH 1000V 215A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: POWER MOS 7®
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
    • Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 30mA
    • Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 42700pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 5000W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • MOSFET 2N-CH 1000V 65A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 1000V (1kV)
    • Current - Continuous Drain (Id) @ 25°C: 65A
    • Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 6mA
    • Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
    • Power - Max: 1250W
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  • MOSFET 2N-CH 200V 317A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 317A
    • Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 10mA
    • Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
    • Power - Max: 1136W
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  • MOSFET 2N-CH 1000V 65A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 1000V (1kV)
    • Current - Continuous Drain (Id) @ 25°C: 65A
    • Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 6mA
    • Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
    • Power - Max: 1250W
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  • MOSFET 4N-CH 100V 278A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 4 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 278A
    • Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
    • Power - Max: 780W
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  • MOSFET 2N-CH 100V 495A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 495A
    • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 10mA
    • Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
    • Power - Max: 1250W
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