Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Microchip Technology SP6

Found: 32
  • MOSFET 2N-CH 500V 163A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 163A
    • Rds On (Max) @ Id, Vgs: 22.5mOhm @ 81.5A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 10mA
    • Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V
    • Power - Max: 1136W
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  • MOSFET 4N-CH 500V 90A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 4 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 90A
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
    • Power - Max: 694W
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  • MOSFET 2N-CH 600V 143A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: CoolMOS™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 143A
    • Rds On (Max) @ Id, Vgs: 18mOhm @ 71.5A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 1036nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
    • Power - Max: 833W
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  • MOSFET 2N-CH 500V 150A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 150A
    • Rds On (Max) @ Id, Vgs: 28mOhm @ 75A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 6mA
    • Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V
    • Power - Max: 1250W
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  • MOSFET 2N-CH 200V 317A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 317A
    • Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 10mA
    • Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
    • Power - Max: 1136W
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  • MOSFET 2N-CH 200V 300A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 300A
    • Rds On (Max) @ Id, Vgs: 7.2mOhm @ 150A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 6mA
    • Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
    • Power - Max: 1250W
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  • MOSFET 2N-CH 1200V 60A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 60A
    • Rds On (Max) @ Id, Vgs: 175mOhm @ 30A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 10mA
    • Gate Charge (Qg) (Max) @ Vgs: 748nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 25V
    • Power - Max: 1250W
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  • MOSFET 4N-CH 200V 208A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 4 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 208A
    • Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
    • Power - Max: 781W
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  • MOSFET 2N-CH 500V 150A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 150A
    • Rds On (Max) @ Id, Vgs: 28mOhm @ 75A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 6mA
    • Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V
    • Power - Max: 1250W
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  • MOSFET 4N-CH 1200V 34A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: POWER MOS 7®
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 4 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 34A
    • Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
    • Power - Max: 780W
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  • MOSFET 4N-CH 1200V 219A SP6C
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 4 N-Channel (Three Level Inverter)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 219A (Tc)
    • Rds On (Max) @ Id, Vgs: 12mOhm @ 150A, 20V
    • Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ)
    • Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V
    • Power - Max: 925W
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  • MOSFET 2N-CH 1000V 65A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 1000V (1kV)
    • Current - Continuous Drain (Id) @ 25°C: 65A
    • Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 6mA
    • Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
    • Power - Max: 1250W
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  • MOSFET 4N-CH 500V 99A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 4 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 99A
    • Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
    • Power - Max: 781W
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  • MOSFET 4N-CH 1000V 43A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 4 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 1000V (1kV)
    • Current - Continuous Drain (Id) @ 25°C: 43A
    • Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
    • Power - Max: 780W
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  • MOSFET 2N-CH 200V 372A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 372A
    • Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 10mA
    • Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
    • Power - Max: 1250W
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