Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Microchip Technology SP6
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- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: SP6
- Supplier Device Package: SP6
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 163A
- Rds On (Max) @ Id, Vgs: 22.5mOhm @ 81.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V
- Power - Max: 1136W
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- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: SP6
- Supplier Device Package: SP6
- FET Type: 4 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 90A
- Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
- Power - Max: 694W
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- Manufacturer: Microchip Technology
- Series: CoolMOS™
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: SP6
- Supplier Device Package: SP6
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 143A
- Rds On (Max) @ Id, Vgs: 18mOhm @ 71.5A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 1036nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
- Power - Max: 833W
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-
- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: SP6
- Supplier Device Package: SP6
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 150A
- Rds On (Max) @ Id, Vgs: 28mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id: 5V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V
- Power - Max: 1250W
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- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: SP6
- Supplier Device Package: SP6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 317A
- Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
- Power - Max: 1136W
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-
- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: SP6
- Supplier Device Package: SP6
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 300A
- Rds On (Max) @ Id, Vgs: 7.2mOhm @ 150A, 10V
- Vgs(th) (Max) @ Id: 5V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
- Power - Max: 1250W
Info from the market- Total warehouses:
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- Offers in stock:
-
- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: SP6
- Supplier Device Package: SP6
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 60A
- Rds On (Max) @ Id, Vgs: 175mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 748nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 25V
- Power - Max: 1250W
Info from the market- Total warehouses:
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- Offers in stock:
-
- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: SP6
- Supplier Device Package: SP6
- FET Type: 4 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 208A
- Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
- Power - Max: 781W
Info from the market- Total warehouses:
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- Offers with a price:
- Offers in stock:
-
- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: SP6
- Supplier Device Package: SP6
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 150A
- Rds On (Max) @ Id, Vgs: 28mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id: 5V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V
- Power - Max: 1250W
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- Manufacturer: Microchip Technology
- Series: POWER MOS 7®
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: SP6
- Supplier Device Package: SP6
- FET Type: 4 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 34A
- Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
- Power - Max: 780W
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-
- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: SP6
- Supplier Device Package: SP6
- FET Type: 4 N-Channel (Three Level Inverter)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 219A (Tc)
- Rds On (Max) @ Id, Vgs: 12mOhm @ 150A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V
- Power - Max: 925W
Info from the market- Total warehouses:
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- Offers in stock:
-
- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: SP6
- Supplier Device Package: SP6
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C: 65A
- Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
- Power - Max: 1250W
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: SP6
- Supplier Device Package: SP6
- FET Type: 4 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 99A
- Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
- Power - Max: 781W
Info from the market- Total warehouses:
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- Offers with a price:
- Offers in stock:
-
- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: SP6
- Supplier Device Package: SP6
- FET Type: 4 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C: 43A
- Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
- Power - Max: 780W
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: SP6
- Supplier Device Package: SP6
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 372A
- Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
- Vgs(th) (Max) @ Id: 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
- Power - Max: 1250W
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- Offers in stock:
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- 100