-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Mounting Type
|
Package / Case
|
Operating Temperature
|
FET Type
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APTM120A29FTG | MOSFET 2N-CH 1200V 34A SP4 | Microchip Technology | SP4 | 780W | Chassis Mount | SP4 | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 34A | Standard | 348mOhm @ 17A, 10V | 5V @ 5mA | 374nC @ 10V | 10300pF @ 25V | |
| MSCC60AM23C4AG | PM-MOSFET-COOLMOS-SBD-SP4 | Microchip Technology | SP4 | Chassis Mount | Module | 2 N-Channel | 600V | 81A (Tc) | Standard |
- 10
- 15
- 50
- 100