Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Microchip Technology SP3F

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 17
  • MSCSM70VM19C3AG
    PM-MOSFET-SIC-SBD~-SP3F
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP3F
    • FET Type: 2 N Channel (Phase Leg)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 700V
    • Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
    • Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
    • Vgs(th) (Max) @ Id: 2.4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
    • Power - Max: 365W (Tc)
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  • MSCC60VRM99CT3AG
    PM-MOSFET-COOLMOS-SBD-SP3F
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Package / Case: Module
    • Supplier Device Package: SP3F
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
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  • MSCSM120HM31CT3AG
    PM-MOSFET-SIC-SBD~-SP3F
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP3F
    • FET Type: 4 N-Channel
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
    • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
    • Vgs(th) (Max) @ Id: 2.8V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
    • Power - Max: 395W (Tc)
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  • MSCSM170DUM15T3AG
    PM-MOSFET-SIC-SP3F
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP3F
    • FET Type: 2 N-Channel (Dual) Common Source
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1700V (1.7kV)
    • Current - Continuous Drain (Id) @ 25°C: 181A (Tc)
    • Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
    • Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
    • Power - Max: 862W (Tc)
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  • MSCSM70AM10CT3AG
    PM-MOSFET-SIC-SBD~-SP3F
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP3F
    • FET Type: 2 N Channel (Phase Leg)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 700V
    • Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
    • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
    • Vgs(th) (Max) @ Id: 2.4V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
    • Power - Max: 690W (Tc)
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  • MSCSM120HM50CT3AG
    PM-MOSFET-SIC-SBD~-SP3F
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP3F
    • FET Type: 4 N-Channel
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
    • Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
    • Vgs(th) (Max) @ Id: 2.7V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
    • Power - Max: 245W (Tc)
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  • MSCSM70DUM10T3AG
    PM-MOSFET-SIC-SP3F
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP3F
    • FET Type: 2 N-Channel (Dual) Common Source
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 700V
    • Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
    • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
    • Vgs(th) (Max) @ Id: 2.4V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
    • Power - Max: 690W (Tc)
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  • MSCSM70HM19CT3AG
    PM-MOSFET-SIC-SBD~-SP3F
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP3F
    • FET Type: 4 N-Channel
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 700V
    • Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
    • Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
    • Vgs(th) (Max) @ Id: 2.4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
    • Power - Max: 365W (Tc)
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  • MSCMC90AM12C3AG
    PM-MOSFET-SIC-SBD~-SP3F
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Package / Case: Module
    • Supplier Device Package: SP3F
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
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  • MSCSM70AM07CT3AG
    PM-MOSFET-SIC-SBD~-SP3F
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP3F
    • FET Type: 2 N Channel (Phase Leg)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 700V
    • Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
    • Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
    • Vgs(th) (Max) @ Id: 2.4V @ 12mA
    • Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
    • Power - Max: 988W (Tc)
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  • MSCSM70TAM19CT3AG
    PM-MOSFET-SIC-SBD~-SP3F
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP3F
    • FET Type: 6 N-Channel (3-Phase Bridge)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 700V
    • Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
    • Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
    • Vgs(th) (Max) @ Id: 2.4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
    • Power - Max: 365W (Tc)
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  • MSCSM120TAM31CT3AG
    PM-MOSFET-SIC-SBD~-SP3F
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP3F
    • FET Type: 6 N-Channel (3-Phase Bridge)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
    • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
    • Vgs(th) (Max) @ Id: 2.8V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
    • Power - Max: 395W (Tc)
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  • MSCSM70DUM07T3AG
    PM-MOSFET-SIC-SP3F
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP3F
    • FET Type: 2 N-Channel (Dual) Common Source
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 700V
    • Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
    • Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
    • Vgs(th) (Max) @ Id: 2.4V @ 12mA
    • Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
    • Power - Max: 988W (Tc)
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  • MSCSM120AM11CT3AG
    PM-MOSFET-SIC-SBD~-SP3F
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP3F
    • FET Type: 2 N Channel (Phase Leg)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
    • Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
    • Vgs(th) (Max) @ Id: 2.8V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
    • Power - Max: 1.067kW (Tc)
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  • MSCSM120DUM11T3AG
    PM-MOSFET-SIC-SP3F
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP3F
    • FET Type: 2 N-Channel (Dual) Common Source
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
    • Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
    • Vgs(th) (Max) @ Id: 2.8V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
    • Power - Max: 1067W (Tc)
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