Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Microchip Technology SP3

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 38
  • APTC80H15T3G
    MOSFET 4N-CH 800V 28A SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 4 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 28A
    • Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 2mA
    • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
    • Power - Max: 277W
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  • APTM10DSKM19T3G
    MOSFET 2N-CH 100V 70A SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 70A
    • Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
    • Power - Max: 208W
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  • APTC60DDAM24T3G
    MOSFET 2N-CH 600V 95A SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: CoolMOS™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 2 N Channel (Dual Buck Chopper)
    • FET Feature: Super Junction
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 95A
    • Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
    • Power - Max: 462W
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  • APTML602U12R020T3AG
    MOSFET 2N-CH 600V 45A SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 45A
    • Rds On (Max) @ Id, Vgs: 150mOhm @ 22.5A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 2.5mA
    • Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
    • Power - Max: 568W
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  • APTMC120HR11CT3AG
    POWER MODULE - SIC MOSFET
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP3
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
    • Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
    • Vgs(th) (Max) @ Id: 3V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V
    • Power - Max: 125W
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  • APTC60DHM24T3G
    MOSFET 2N-CH 600V 95A SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: CoolMOS™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 2 N-Channel (Dual) Asymmetrical
    • FET Feature: Super Junction
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 95A
    • Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
    • Power - Max: 462W
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  • APTMC120TAM34CT3AG
    POWER MODULE - SIC MOSFET
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP3
    • FET Type: 6 N-Channel (3-Phase Bridge)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
    • Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
    • Vgs(th) (Max) @ Id: 4V @ 15mA
    • Gate Charge (Qg) (Max) @ Vgs: 161nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V
    • Power - Max: 375W
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  • APTM50DDA10T3G
    MOSFET 2N-CH 500V 37A SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 37A
    • Rds On (Max) @ Id, Vgs: 120mOhm @ 18.5A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4367pF @ 25V
    • Power - Max: 312W
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  • APTMC60TLM55CT3AG
    MOSFET 4N-CH 1200V 55A SP3F
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 4 N-Channel (Three Level Inverter)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
    • Rds On (Max) @ Id, Vgs: 49mOhm @ 40A, 20V
    • Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ)
    • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V
    • Power - Max: 250W
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  • APTC60DDAM35T3G
    MOSFET 2N-CH 600V 72A SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 72A
    • Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
    • Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
    • Power - Max: 416W
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  • APTM10HM19FT3G
    MOSFET 4N-CH 100V 70A SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 4 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 70A
    • Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
    • Power - Max: 208W
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  • APTM100H35FT3G
    MOSFET 4N-CH 1000V 22A SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 4 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 1000V (1kV)
    • Current - Continuous Drain (Id) @ 25°C: 22A
    • Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 2.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
    • Power - Max: 390W
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  • APTM100H45FT3G
    MOSFET 4N-CH 1000V 18A SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 4 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 1000V (1kV)
    • Current - Continuous Drain (Id) @ 25°C: 18A
    • Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 2.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
    • Power - Max: 357W
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  • APTM10HM09FT3G
    MOSFET 4N-CH 100V 139A SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 4 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 139A
    • Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 2.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
    • Power - Max: 390W
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  • APTC60HM70BT3G
    MOSFET 4N-CH 600V 39A SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: CoolMOS™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 4 N-Channel (Half Bridge)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 39A
    • Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
    • Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
    • Power - Max: 250W
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