Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Microchip Technology SP1

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 20
  • APTMC120AM55CT1AG
    MOSFET 2N-CH 1200V 55A SP1
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
    • Rds On (Max) @ Id, Vgs: 49mOhm @ 40A, 20V
    • Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ)
    • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V
    • Power - Max: 250W
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  • APTC60AM45B1G
    MOSFET 3N-CH 600V 49A SP1
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: CoolMOS™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • FET Type: 3 N Channel (Phase Leg + Boost Chopper)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 49A
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
    • Power - Max: 250W
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  • APTM50H15FT1G
    MOSFET 4N-CH 500V 25A SP1
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • FET Type: 4 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 25A
    • Rds On (Max) @ Id, Vgs: 180mOhm @ 21A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V
    • Power - Max: 208W
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  • APTM120H140FT1G
    MOSFET 4N-CH 1200V 8A SP1
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • FET Type: 4 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 8A
    • Rds On (Max) @ Id, Vgs: 1.68Ohm @ 7A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V
    • Power - Max: 208W
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  • APTC60AM45T1G
    MOSFET 2N-CH 600V 49A SP1
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 49A
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
    • Power - Max: 250W
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  • APTC60HM45T1G
    MOSFET 4N-CH 600V 49A SP1
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • FET Type: 4 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 49A
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
    • Power - Max: 250W
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  • APTC60DDAM45T1G
    MOSFET 2N-CH 600V 49A SP1
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: CoolMOS™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • FET Type: 2 N Channel (Dual Buck Chopper)
    • FET Feature: Super Junction
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 49A
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
    • Power - Max: 250W
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  • APTC60AM45BC1G
    MOSFET 3N-CH 600V 49A SP1
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: CoolMOS™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • FET Type: 3 N Channel (Phase Leg + Boost Chopper)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 49A
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
    • Power - Max: 250W
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  • APTC60HM70T1G
    MOSFET 4N-CH 600V 39A SP1
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • FET Type: 4 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 39A
    • Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
    • Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
    • Power - Max: 250W
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  • APTC60DDAM70T1G
    MOSFET 2N-CH 600V 39A SP1
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: CoolMOS™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • FET Type: 2 N Channel (Dual Buck Chopper)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 39A
    • Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
    • Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
    • Power - Max: 250W
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  • APTMC120AM20CT1AG
    MOSFET 2N-CH 1200V 143A SP1
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • FET Type: 2 N Channel (Phase Leg)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 143A (Tc)
    • Rds On (Max) @ Id, Vgs: 17mOhm @ 100A, 20V
    • Vgs(th) (Max) @ Id: 2.3V @ 2mA (Typ)
    • Gate Charge (Qg) (Max) @ Vgs: 360nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 5960pF @ 1000V
    • Power - Max: 600W
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  • APTC60AM24T1G
    MOSFET 2N-CH 600V 95A SP1
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 95A
    • Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
    • Power - Max: 462W
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  • APTM60H23FT1G
    MOSFET 4N-CH 600V 20A SP1
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • FET Type: 4 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 20A
    • Rds On (Max) @ Id, Vgs: 276mOhm @ 17A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5316pF @ 25V
    • Power - Max: 208W
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  • APTC90AM60T1G
    MOSFET 2N-CH 900V 59A SP1
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: CoolMOS™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Super Junction
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 59A
    • Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 6mA
    • Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
    • Power - Max: 462W
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  • APTMC170AM30CT1AG
    MOSFET 2N-CH 1700V 106A SP1
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • FET Type: 2 N Channel (Phase Leg)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1700V (1.7kV)
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 30mOhm @ 100A, 20V
    • Vgs(th) (Max) @ Id: 2.3V @ 5mA (Typ)
    • Gate Charge (Qg) (Max) @ Vgs: 380nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 6160pF @ 1000V
    • Power - Max: 700W
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