Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Microchip Technology SOT-23 (TO-236AB)

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 3
  • LND250K1-G
    MOSFET N-CH 500V 0.013A SOT23-3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23 (TO-236AB)
    • FET Type: N-Channel
    • FET Feature: Depletion Mode
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 13mA (Tj)
    • Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
    • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 360mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 0V
    • Vgs (Max): ±20V
    Info from the market
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  • TN5335K1-G
    MOSFET N-CH 350V 0.11A SOT23-3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23 (TO-236AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 350V
    • Current - Continuous Drain (Id) @ 25°C: 110mA (Tj)
    • Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V
    • Vgs(th) (Max) @ Id: 2V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 360mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
    • Vgs (Max): ±20V
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  • 2N7002-G
    MOSFET N-CH 60V 0.115A SOT23-3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23 (TO-236AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 115mA (Tj)
    • Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 360mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
    • Vgs (Max): ±30V
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