Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Microchip Technology SOT-227 (ISOTOP®)
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- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227 (ISOTOP®)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 1.2kV
- Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Technology: SiCFET (Silicon Carbide)
- Power Dissipation (Max): 278W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs (Max): +25V, -10V
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