-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Vgs (Max)
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MIC94053YC6-TR | MOSFET P-CH 6V 2A SC70-6 | Microchip Technology | SC-70-6 | Surface Mount | 6-TSSOP, SC-88, SOT-363 | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | P-Channel | 270mW (Ta) | 6V | 2A (Ta) | 84mOhm @ 100mA, 4.5V | 1.8V, 4.5V | 1.2V @ 250µA | -6V |
| MIC94053BC6-TR | MOSFET P-CH 6V 2A SC70-6 | Microchip Technology | SC-70-6 | Surface Mount | 6-TSSOP, SC-88, SOT-363 | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | P-Channel | 270mW (Ta) | 6V | 2A (Ta) | 84mOhm @ 100mA, 4.5V | 1.8V, 4.5V | 1.2V @ 250µA | -6V |
| MIC94052BC6-TR | MOSFET P-CH 6V 2A SC70-6 | Microchip Technology | SC-70-6 | Surface Mount | 6-TSSOP, SC-88, SOT-363 | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | P-Channel | 270mW (Ta) | 6V | 2A (Ta) | 84mOhm @ 100mA, 4.5V | 1.8V, 4.5V | 1.2V @ 250µA | -6V |
| MIC94052YC6-TR | MOSFET P-CH 6V 2A SC70-6 | Microchip Technology | SC-70-6 | Surface Mount | 6-TSSOP, SC-88, SOT-363 | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | P-Channel | 270mW (Ta) | 6V | 2A (Ta) | 84mOhm @ 100mA, 4.5V | 1.8V, 4.5V | 1.2V @ 250µA | -6V |
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