Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Microchip Technology ISOTOP®
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- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: Microchip Technology
- Series: POWER MOS 7®
- Mounting Type: Chassis Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: ISOTOP®
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Rds On (Max) @ Id, Vgs: 60mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 289nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12630pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 694W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
Info from the market- Total warehouses:
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-
- Manufacturer: Microchip Technology
- Series: POWER MOS 7®
- Mounting Type: Chassis Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: ISOTOP®
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Rds On (Max) @ Id, Vgs: 65mOhm @ 29A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7010pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 520W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
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- 100