-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MCT04P06-TP | P-CHANNEL MOSFET, SOT-223 PACKAG | Micro Commercial Co | SOT-223 | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2W | 60V | 3.5A | 80mOhm @ 3.1A, 10V | 4.5V, 10V | 3V @ 250µA | 12nC @ 4.5V | 650pF @ 15V | ±20V |
MCT06P10-TP | P-CHANNEL MOSFETSOT-223 | Micro Commercial Co | SOT-223 | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | 150°C (TJ) | P-Channel | 1.25W | 100V | 6A | 205mOhm @ 6A, 10V | 4.5V, 10V | 2.8V @ 250µA | 25nC @ 10V | 760pF @ 25V | ±20V |
- 10
- 15
- 50
- 100