-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| LSIC1MO170E1000 | MOSFET SIC 1700V N-CH TO-247-3L | Littelfuse Inc. | TO-247-3L | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 54W (Tc) | 1700V | 5A (Tc) | 1Ohm @ 2A, 20V | 15V, 20V | 4V @ 1mA | 15nC @ 20V | 200pF @ 1000V | +22V, -6V |
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